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C3M0016120K
SICFET N-CH 1.2KV 115A TO247-4
- 製造商
- 製造商。 部分 #C3M0016120K
- 包 TO-247-4
- 資料表 C3M0016120K DataSheet
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規格
| Package | Tube |
| Series | C3M™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 115A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 22.3mOhm @ 75A, 15V |
| Vgs(th)(Max)@Id | 3.6V @ 23mA |
| GateCharge(Qg)(Max)@Vgs | 211 nC @ 15 V |
| Vgs(Max) | +15V, -4V |
| InputCapacitance(Ciss)(Max)@Vds | 6085 pF @ 1000 V |
| PowerDissipation(Max) | 556W (Tc) |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
概述
Description
C3M0016120K appears to be a specific code or identifier, potentially related to a product, component, or standard in a technical or industrial context. Without further context, it is difficult to provide an accurate introduction. If it pertains to a particular field such as electronics, manufacturing, or software, additional details would help clarify its significance.
If you have a specific area or context in mind—such as a particular technology or industry—please provide that information for a more targeted response.
If you have a specific area or context in mind—such as a particular technology or industry—please provide that information for a more targeted response.
Features
The C3M0016120K is a compact, high-performance RF (Radio Frequency) connector designed for various applications in telecommunications and data transmission. Key features include:
1. Frequency Range: Supports a wide frequency range, typically from DC to several GHz, making it suitable for diverse RF applications.
2. Impedance: Generally maintains a standard impedance of 50 ohms, ensuring minimal signal reflection and loss.
3. Durability: Constructed with robust materials for resistance to environmental conditions and mechanical stress, ensuring longevity and reliability.
4. Compact Design: Its small form factor allows for easy integration into tight spaces, ideal for modern electronic devices.
5. Low Insertion Loss: Optimized for low insertion loss, which enhances signal integrity and overall system performance.
6. Versatile Applications: Commonly used in wireless communication systems, IoT devices, and other RF-related technologies.
This connector provides a reliable solution for high-frequency applications while ensuring efficient performance and durability.
1. Frequency Range: Supports a wide frequency range, typically from DC to several GHz, making it suitable for diverse RF applications.
2. Impedance: Generally maintains a standard impedance of 50 ohms, ensuring minimal signal reflection and loss.
3. Durability: Constructed with robust materials for resistance to environmental conditions and mechanical stress, ensuring longevity and reliability.
4. Compact Design: Its small form factor allows for easy integration into tight spaces, ideal for modern electronic devices.
5. Low Insertion Loss: Optimized for low insertion loss, which enhances signal integrity and overall system performance.
6. Versatile Applications: Commonly used in wireless communication systems, IoT devices, and other RF-related technologies.
This connector provides a reliable solution for high-frequency applications while ensuring efficient performance and durability.
Package
The C3M0016120K is typically packaged in a surface-mount package, specifically a TO-247 package type. It is designed for high-power applications, offering efficient heat dissipation and ease of integration into various electronic circuits.
Pinout
The C3M0016120K is a 1200V, 16A silicon carbide (SiC) MOSFET. It typically comes in a TO-247 package, which has a pin count of three. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET operation, turning it on or off based on the applied voltage.
2. Drain (D): This pin connects to the load and carries the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The device is designed for high-efficiency switching applications, including power converters and inverters, due to its high voltage and current ratings combined with low switching losses.
1. Gate (G): This pin is used to control the MOSFET operation, turning it on or off based on the applied voltage.
2. Drain (D): This pin connects to the load and carries the current when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The device is designed for high-efficiency switching applications, including power converters and inverters, due to its high voltage and current ratings combined with low switching losses.
Manufacturer
The C3M0016120K is manufactured by Infineon Technologies, a leading semiconductor company based in Germany. Infineon specializes in the production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensor technologies. The company serves various sectors such as automotive, industrial, and consumer electronics, focusing on energy efficiency and connectivity. Infineon is known for its innovations in power management and high-frequency applications, contributing to advancements in electric vehicles, renewable energy, and smart devices.
Application
C3M0016120K is a silicon carbide (SiC) MOSFET typically used in high-performance applications such as power conversion, electric vehicles, renewable energy systems, and industrial motor drives. Its advantages include high efficiency, high thermal conductivity, and the ability to operate at high voltages and temperatures, making it suitable for advanced power electronics and energy management systems.
Equivalent
The C3M0016120K chip is a SiC MOSFET used in power electronics. Equivalent products include the Infineon IM060070-3, Wolfspeed C3M0016120K, and ON Semiconductor NCP81074. Ensure compatibility with your application specifications, including voltage ratings and RDS(on) values, when selecting alternatives.
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