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C2M0160120D
SICFET N-CH 1200V 19A TO247-3
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- 資料表 C2M0160120D DataSheet
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規格
| Series | Z-FET™ |
| Part Status | Obsolete |
| Base Product Number | C2M0160120 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 32.6 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 527 pF @ 800 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Tube |
概述
Description
C2M0160120D refers to a specific product code or model, which could pertain to various industries such as electronics, manufacturing, or consumer goods. Without additional context, it’s challenging to provide precise details. Typically, such codes are used for inventory management, product identification, or categorizing items within a supply chain. If you are looking for specific information about this code—such as its specifications, applications, or manufacturer—it would be helpful to consult the relevant product documentation or manufacturer's website. Please provide more context if you need detailed insights about a particular application or industry related to C2M0160120D.
Features
The C2M0160120D is a high-performance MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Capable of handling high voltages, ensuring robust performance in demanding environments.
2. Low On-Resistance (Rds(on)): This minimizes power loss and enhances efficiency during operation.
3. Fast Switching Speed: Enables quick transitions, making it suitable for high-frequency applications.
4. Thermal Performance: Designed to dissipate heat effectively, reducing the risk of overheating in high-load scenarios.
5. Package Type: Typically available in a compact package for easy integration into circuit designs, saving space on PCBs.
6. Gate Threshold Voltage: Optimized for compatibility with various gate drive circuits.
7. Reliability: Built to withstand rigorous conditions, ensuring longevity and stable performance in various applications.
Overall, the C2M0160120D is ideal for use in power converters, inverters, and other electronic devices requiring efficient power management.
1. Voltage Rating: Capable of handling high voltages, ensuring robust performance in demanding environments.
2. Low On-Resistance (Rds(on)): This minimizes power loss and enhances efficiency during operation.
3. Fast Switching Speed: Enables quick transitions, making it suitable for high-frequency applications.
4. Thermal Performance: Designed to dissipate heat effectively, reducing the risk of overheating in high-load scenarios.
5. Package Type: Typically available in a compact package for easy integration into circuit designs, saving space on PCBs.
6. Gate Threshold Voltage: Optimized for compatibility with various gate drive circuits.
7. Reliability: Built to withstand rigorous conditions, ensuring longevity and stable performance in various applications.
Overall, the C2M0160120D is ideal for use in power converters, inverters, and other electronic devices requiring efficient power management.
Package
The C2M0160120D is typically packaged in a TO-247 or similar type, which is a robust, insulated package designed for high-power applications. This package ensures efficient heat dissipation and mechanical stability, making it suitable for use in power electronic devices such as inverters and converters.
Pinout
The C2M0160120D is a MOSFET device with a total pin count of 8. It is designed for high-efficiency applications, typically in power management and switching circuits. The main functions of its pins include:
1. Gate (G): Controls the switching of the device.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): Connected to ground or the negative side of the load.
4. Thermal Pad: Provides heat dissipation and improves thermal performance.
Ensure to consult the specific datasheet for detailed specifications, including maximum ratings and electrical characteristics.
1. Gate (G): Controls the switching of the device.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): Connected to ground or the negative side of the load.
4. Thermal Pad: Provides heat dissipation and improves thermal performance.
Ensure to consult the specific datasheet for detailed specifications, including maximum ratings and electrical characteristics.
Manufacturer
The C2M0160120D is manufactured by Cree, Inc. Cree is a semiconductor company primarily known for its development and production of LED lighting components and power and radio-frequency (RF) devices. Founded in 1987 and based in Durham, North Carolina, Cree has been a pioneer in the LED industry and has expanded its portfolio to include silicon carbide (SiC) power devices, which are used in various applications such as electric vehicles, renewable energy systems, and industrial power supplies. The company focuses on innovation in energy-efficient technologies and aims to reduce energy consumption across various sectors.
Application
C2M0160120D is a high-performance MOSFET commonly used in power management applications, such as DC-DC converters, power supplies, and motor drives. Its low on-resistance and fast switching capabilities make it suitable for battery management systems, electric vehicles, and renewable energy systems. Additionally, it can be employed in consumer electronics for efficient power conversion and thermal management.
Equivalent
The C2M0160120D is a 1200V, 16A, SiC MOSFET. Equivalent products include the C3M0060120K, C3M0160120K, and the SCT3160KL from manufacturers like Cree, ON Semiconductor, and Rohm, respectively. Always check specific datasheets for exact specifications and suitability in your application.
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