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BUK9Y4R8-60E
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規格
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-669-5 |
概述
Description
BUK9Y4R8-60E is a specific identifier that may refer to a product, model, or code in a particular context. However, without additional context, it is difficult to provide a precise introduction. This code could relate to electronics, machinery, or other specialized equipment.
To better understand BUK9Y4R8-60E, consider researching the specific field it pertains to, such as electronics, where similar codes are often used for semiconductors or components. If it is a part number, checking manufacturer specifications, datasheets, or relevant industry literature will provide clearer insights into its features, applications, and compatibility.
If you have a specific context or domain in mind, please provide more details for a tailored response.
To better understand BUK9Y4R8-60E, consider researching the specific field it pertains to, such as electronics, where similar codes are often used for semiconductors or components. If it is a part number, checking manufacturer specifications, datasheets, or relevant industry literature will provide clearer insights into its features, applications, and compatibility.
If you have a specific context or domain in mind, please provide more details for a tailored response.
Features
The BUK9Y4R8-60E is a high-performance power MOSFET designed for various applications, including power management and switching. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 90A, making it suitable for high-current applications. The device has a low on-resistance (Rds(on)) value, which enhances efficiency by minimizing power loss during operation.
Key features include:
1. Low Gate Charge (Qg): Reduces switching losses, improving efficiency in high-frequency applications.
2. Fast Switching Speed: Enables effective performance in high-speed circuits.
3. Thermal Resistance: Built to handle high temperatures, ensuring reliability in demanding environments.
4. SMD Package: Available in a surface-mount package for compact designs.
Overall, the BUK9Y4R8-60E is ideal for use in power supplies, motor drivers, and other applications requiring efficient power handling and thermal management.
Key features include:
1. Low Gate Charge (Qg): Reduces switching losses, improving efficiency in high-frequency applications.
2. Fast Switching Speed: Enables effective performance in high-speed circuits.
3. Thermal Resistance: Built to handle high temperatures, ensuring reliability in demanding environments.
4. SMD Package: Available in a surface-mount package for compact designs.
Overall, the BUK9Y4R8-60E is ideal for use in power supplies, motor drivers, and other applications requiring efficient power handling and thermal management.
Package
The BUK9Y4R8-60E is a N-channel MOSFET packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used in power applications.
Pinout
The BUK9Y4R8-60E is a N-channel MOSFET device with a total of 8 pins. The pin configuration is as follows:
1. Gate (G): Controls the device operation.
2. Drain (D): The terminal through which the current flows out.
3. Source (S): The terminal through which the current flows in.
The specific functions of the pins are:
- Pin 1 (Gate): Activates the MOSFET when voltage is applied.
- Pin 2 (Source): Connects to the power supply or ground, depending on the application.
- Pin 3 (Drain): Connects to the load.
- Pins 4-8: Are typically used for additional connections, including thermal and mounting features.
This MOSFET is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities.
1. Gate (G): Controls the device operation.
2. Drain (D): The terminal through which the current flows out.
3. Source (S): The terminal through which the current flows in.
The specific functions of the pins are:
- Pin 1 (Gate): Activates the MOSFET when voltage is applied.
- Pin 2 (Source): Connects to the power supply or ground, depending on the application.
- Pin 3 (Drain): Connects to the load.
- Pins 4-8: Are typically used for additional connections, including thermal and mounting features.
This MOSFET is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The BUK9Y4R8-60E is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components. The company focuses on high-volume manufacturing and offers a wide range of products, including power transistors, diodes, and integrated circuits. Nexperia is known for its commitment to quality and efficiency in the semiconductor industry and serves various sectors, including automotive, industrial, and consumer electronics.
Application
BUK9Y4R8-60E is a high-voltage N-channel MOSFET used in various applications such as power management, motor control, and DC-DC converters. Its features make it suitable for renewable energy systems, automotive electronics, and industrial automation. Additionally, it is employed in switching power supplies and electronic lighting systems due to its efficiency and thermal performance.
Equivalent
The BUK9Y4R8-60E is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Ensure to check specifications such as voltage, current ratings, and RDS(on) for compatibility in your application.
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