BUK9M85-60EX

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BUK9M85-60EX

MOSFET N-CH 60V 12.8A LFPAK33

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規格

Series TrenchMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 73mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 434 pF @ 25 V
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead)
Base Product Number BUK9M85

概述

Description

The BUK9M85-60EX is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is part of the N-channel MOSFET family and is manufactured by Nexperia, a leading semiconductor company. This component is characterized by its low on-state resistance and high-speed switching capabilities, making it suitable for use in power management, DC-DC converters, and motor control.
With a voltage rating of 60V and a current capacity of typically around 85A, the BUK9M85-60EX is optimized for performance in medium to high power applications. It features a low gate charge and a rugged design that ensures reliable operation under challenging conditions. The MOSFET is encapsulated in standard surface-mount packages, which facilitates easy integration into compact circuit designs.
The device also offers excellent thermal performance, which is crucial for maintaining efficiency and reliability in power electronics. Overall, the BUK9M85-60EX provides a robust solution for engineers looking to design efficient and compact high-power systems.

Features

The BUK9M85-60EX is an N-channel MOSFET transistor known for its high efficiency and compact design, making it ideal for various power management applications. Key features include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of around 60V and a continuous drain current (I_D) of up to 75A, which allows it to handle significant power loads.
2. Low On-Resistance: This device offers low R_DS(on) values, reducing power losses and improving energy efficiency during operation, which is critical for applications requiring high efficiency.
3. Thermal Performance: The MOSFET is designed to manage heat effectively, often being paired with appropriate heat sinks or PCB designs to optimize thermal performance.
4. Fast Switching: With rapid switching capabilities, the BUK9M85-60EX is suitable for high-frequency applications, contributing to compact and efficient circuit designs.
5. Robust Design: It includes features that provide protection against over-voltage and over-current conditions, enhancing reliability in demanding environments.
These features make the BUK9M85-60EX suitable for use in consumer electronics, automotive systems, and industrial equipment where efficient power regulation and management are essential.

Package

The BUK9M85-60EX is a MOSFET transistor packaged in a DFN3333-8 (Dual Flat No-leads) form, which typically measures 3.3 mm x 3.3 mm. This package provides efficient thermal performance and is designed for surface-mount applications, offering a compact solution for electronic circuits.

Pinout

The BUK9M85-60EX is a power MOSFET transistor. It is a part of the NXP's TrenchMOS series designed for high-speed switching applications. The BUK9M85-60EX typically comes in a package like the SOT457 (TSOP6), which is a small surface-mount package. This package generally has six pins. The pin configuration typically includes:
1. Drain: The primary terminal for the high current load.
2. Gate: The terminal that controls the MOSFET switching.
3. Source: The terminal connected to the ground or return path of the circuit.
In the BUK9M85-60EX, multiple pins may be internally connected to the same terminal to handle higher currents. The exact pin configuration can be confirmed by referring to the device's datasheet. This MOSFET is commonly used in various applications such as DC-DC converters, power management systems, and motor control circuits due to its efficient switching capability and low on-resistance.

Manufacturer

The BUK9M85-60EX is manufactured by Nexperia. Nexperia is a global semiconductor company that specializes in producing discrete components, logic devices, and MOSFETs. It was founded in 2017 as a separate entity after being spun off from NXP Semiconductors. The company is headquartered in Nijmegen, Netherlands, and focuses on high-volume, high-efficiency semiconductor components for the automotive, industrial, computing, and consumer electronics markets. Nexperia emphasizes innovation and sustainability in its production processes and aims to provide components that enhance the performance and energy efficiency of electronic devices.

Application

The BUK9M85-60EX is a MOSFET (metal-oxide-semiconductor field-effect transistor) commonly used in various electronic applications. Its primary application areas include power management systems, DC-DC converters, motor control circuits, and power supply modules. It is particularly suitable for use in automotive electronics, industrial equipment, and consumer electronics where efficient power switching and low conduction losses are critical. Its robust design allows it to handle high levels of current and voltage, making it ideal for applications requiring reliable performance under demanding conditions.

Equivalent

The BUK9M85-60EX is a N-channel MOSFET. Equivalent products include:
1. IRF540N from Infineon Technologies
2. FDMS86200 from ON Semiconductor
3. STP75NF75 from STMicroelectronics
Verify datasheets to ensure compatibility in terms of voltage, current ratings, and package type, as these may vary slightly.

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