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BUK9K18-40E
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規格
| Technology | Si |
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Package / Case | LFPAK-56D-8 |
概述
Description
BUK9K18-40E is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and switching. It features a low on-resistance, which minimizes power loss and heat generation during operation, making it suitable for high-efficiency designs. The device has a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating that allows it to handle substantial loads. Additionally, it offers fast switching capabilities, which are ideal for applications in DC-DC converters, motor drives, and power supplies. Its robust construction and thermal performance ensure reliability in demanding environments. Typical applications include automotive electronics, industrial automation, and consumer electronics. Overall, the BUK9K18-40E is an excellent choice for engineers looking to optimize power efficiency and performance in their designs.
Features
The BUK9K18-40E is a high-performance N-channel MOSFET designed for applications requiring efficient power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various electronic circuits.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 9A, making it ideal for medium-power applications.
3. Low On-Resistance: With a low on-resistance (R_DS(on)) of approximately 18 mΩ, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: The device offers fast switching speeds, which is advantageous for high-frequency applications.
5. Thermal Performance: It has a robust thermal profile, allowing for effective heat dissipation, essential for reliability in demanding environments.
6. Package: Typically available in a TO-220 or similar package, facilitating easy heat sinking and installation.
These features make the BUK9K18-40E suitable for power supplies, motor drives, and other power conversion applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various electronic circuits.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 9A, making it ideal for medium-power applications.
3. Low On-Resistance: With a low on-resistance (R_DS(on)) of approximately 18 mΩ, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: The device offers fast switching speeds, which is advantageous for high-frequency applications.
5. Thermal Performance: It has a robust thermal profile, allowing for effective heat dissipation, essential for reliability in demanding environments.
6. Package: Typically available in a TO-220 or similar package, facilitating easy heat sinking and installation.
These features make the BUK9K18-40E suitable for power supplies, motor drives, and other power conversion applications.
Package
The BUK9K18-40E is typically packaged in a TO-220 package type. This package design is suitable for high-power applications, providing good thermal performance and ease of mounting on heat sinks.
Pinout
The BUK9K18-40E is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current exits the MOSFET when it is in the conducting state.
3. Source (S): The source pin is connected to the ground or the lower potential side of the circuit.
4. Body Diode (internal): Though not an external pin, it is essential for the device’s operation, allowing current to flow from drain to source when the MOSFET is off.
This device is commonly used in applications such as power management and switching circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current exits the MOSFET when it is in the conducting state.
3. Source (S): The source pin is connected to the ground or the lower potential side of the circuit.
4. Body Diode (internal): Though not an external pin, it is essential for the device’s operation, allowing current to flow from drain to source when the MOSFET is off.
This device is commonly used in applications such as power management and switching circuits.
Manufacturer
The BUK9K18-40E is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon is known for its production of a wide range of semiconductor and system solutions, including power semiconductors, microcontrollers, and sensors. The company serves various markets, including automotive, industrial, and consumer electronics, focusing on energy efficiency and secure connectivity. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon is recognized for its innovative technologies and commitment to sustainability.
Application
The BUK9K18-40E is a N-channel MOSFET primarily used in power management applications. Its key application areas include motor control, power supply circuits, DC-DC converters, and battery management systems. Additionally, it is utilized in industrial automation, renewable energy systems, and automotive electronics due to its high efficiency and fast switching capabilities.
Equivalent
The BUK9K18-40E is an N-channel MOSFET. Equivalent products include the IRF3205, FQP90N06, and STP75NF75. Check specific datasheets for exact parameters like voltage, current, and RDS(on) to ensure compatibility.
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