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BUK7S1R0-40H
MOSFETs
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概述
Description
BUK7S1R0-40H is a N-channel MOSFET designed for high-efficiency power management applications. It features a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) rating of 70A, making it suitable for various switching applications in power supplies and motor drives. The MOSFET has a low on-resistance (Rds(on)), which minimizes conduction losses and improves overall efficiency.
Key features include fast switching speeds, low gate charge (Qg), and robust thermal performance due to its TO-220 package. These characteristics enable effective heat dissipation, allowing for higher power density in designs. The BUK7S1R0-40H is typically used in applications like DC-DC converters, battery management systems, and automotive power systems.
Overall, this device is well-suited for designers aiming to enhance performance while maintaining reliability in demanding environments. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Key features include fast switching speeds, low gate charge (Qg), and robust thermal performance due to its TO-220 package. These characteristics enable effective heat dissipation, allowing for higher power density in designs. The BUK7S1R0-40H is typically used in applications like DC-DC converters, battery management systems, and automotive power systems.
Overall, this device is well-suited for designers aiming to enhance performance while maintaining reliability in demanding environments. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Features
The BUK7S1R0-40H is an N-channel MOSFET designed for efficient power management in a variety of applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 75A, allowing it to support heavy loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 7.1 mΩ, which minimizes conduction losses and improves thermal performance.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, making it ideal for applications such as DC-DC converters and motor drivers.
5. Package Type: It comes in a TO-220 package, providing good thermal dissipation and ease of mounting.
These attributes make the BUK7S1R0-40H suitable for automotive, industrial, and consumer electronics applications requiring efficient and reliable power management solutions.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 75A, allowing it to support heavy loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 7.1 mΩ, which minimizes conduction losses and improves thermal performance.
4. Fast Switching Speed: The MOSFET offers fast switching capabilities, making it ideal for applications such as DC-DC converters and motor drivers.
5. Package Type: It comes in a TO-220 package, providing good thermal dissipation and ease of mounting.
These attributes make the BUK7S1R0-40H suitable for automotive, industrial, and consumer electronics applications requiring efficient and reliable power management solutions.
Package
The BUK7S1R0-40H is a N-channel MOSFET packaged in a TO-220 format. This package type provides excellent thermal performance and is suitable for applications requiring high power handling.
Pinout
The BUK7S1R0-40H is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate turns the MOSFET on (conducting state).
2. Drain (D): This pin is where the current flows out of the transistor when it is in the on state.
3. Source (S): This pin is connected to the ground or negative voltage; it serves as the return path for current flowing through the device.
The BUK7S1R0-40H is designed for high-speed switching applications and can handle high voltages up to 40V, making it suitable for various power management and switching applications.
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage to the gate turns the MOSFET on (conducting state).
2. Drain (D): This pin is where the current flows out of the transistor when it is in the on state.
3. Source (S): This pin is connected to the ground or negative voltage; it serves as the return path for current flowing through the device.
The BUK7S1R0-40H is designed for high-speed switching applications and can handle high voltages up to 40V, making it suitable for various power management and switching applications.
Manufacturer
The BUK7S1R0-40H is manufactured by Nexperia, a semiconductor company. Nexperia specializes in the production of a wide range of discrete and integrated semiconductor components, including diodes, transistors, and MOSFETs. The company focuses on delivering high-quality products used in various applications such as automotive, industrial, and consumer electronics. Nexperia was established as a separate entity in 2017, stemming from the divestiture of NXP Semiconductors' standard products division. The company is headquartered in Nijmegen, Netherlands, and operates globally, emphasizing reliability and efficiency in its semiconductor solutions.
Application
The BUK7S1R0-40H is a high-performance N-channel MOSFET primarily used in applications such as power management, motor control, DC-DC converters, and industrial automation. Its features make it suitable for switching and amplification tasks in power supplies, electric vehicles, and renewable energy systems like solar inverters.
Equivalent
The BUK7S1R0-40H is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. When looking for alternatives, ensure similar voltage, current ratings, and package types are considered for compatibility. Always verify specifications before substitution.
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