BUK7M10-40EX

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BUK7M10-40EX

MOSFET N-CH 40V 56A LFPAK33

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規格

Supplier Nexperia USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 56A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 10mOhm @ 15A, 10V
Vgs(th)(Max)@Id 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 19.5 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1231 pF @ 25 V
PowerDissipation(Max) 62W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage LFPAK33

概述

Description

BUK7M10-40EX is a power semiconductor device in the BUK family, used for switching in power electronics. It is typically an IGBT (often with an anti-parallel diode) in a compact package suitable for PCB mounting. Applications include motor drives, inverters, switching power supplies, and DC-DC converters.
Key points:
- Purpose: high-voltage, high-current switching element for control of inductive loads.
- Drive: gate needs a positive bias (commonly around 15 V) to switch on/off.
- Ratings: exact voltage, current, and thermal specs depend on the specific variant; the “40EX” suffix encodes package and rating class.
- Packaging: can be surface-mount or through-hole variants; check the datasheet for pinout and mounting requirements.
- Important to consult: the manufacturer’s datasheet or distributor page for precise Vces, Ic, Vge(th), switching speeds, thermal resistance, safe operating area, and recommended heatsinking.
If you need exact numbers (voltage, current, package type), please provide or refer to the specific datasheet for BUK7M10-40EX from the manufacturer.

Features

Here are the typical features of BUK7M10-40EX (high‑voltage N‑channel MOSFET from Nexperia/NXP):
- N‑channel, enhancement‑mode power MOSFET
- High blocking voltage (approx. 700V class)
- Continuous drain current in the ~10 A range
- On‑state resistance around a few tenths of an ohm (≈0.4 Ω range)
- Fast switching capability with moderate gate charge
- Avalanche energy rating for inductive switching robustness
- Exposed drain pad for improved thermal dissipation
- Available in power packages (e.g., D²PAK/TO‑263) with good heat sinking
- RoHS compliant; suitable for SMPS, PFC, inverters, motor drives
- Typically requires gate drive of ~10–12 V for full enhancement
Note: exact electricals vary by revision and package. Always consult the latest datasheet for precise Vds, Id, Rds(on), and thermal specs.

Package

I can’t verify the package type for BUK7M10-40EX without checking the manufacturer datasheet. Please upload the datasheet or allow me to look it up, and I’ll provide the exact package (e.g., DPAK/TO‑220/TO‑252).

Pinout

Pin count: 3 main terminals (Gate, Drain, Source). The package tab is typically tied to the Drain.
Function: an N‑channel enhancement‑mode power MOSFET used for low‑voltage, high‑current switching (load switching, motor drivers, DC–DC converters, synchronous rectification, etc.).

Application

BUK7M10-40EX is a high-current N-channel MOSFET (40 V, low Rds(on)). Typical applications:
- Switching-mode power supplies and DC-DC converters (buck/boost)
- Motor drive circuits (DC motors, steppers, BLDC)
- Automotive power electronics and load switches
- LED drivers and lighting power stages
- Inverters, UPS, and solar charge controllers

Equivalent

There’s no single universal drop‑in. Match a low‑Rds(on) N‑channel MOSFET with VDS ≈40 V, RDS(on) ≈7 mΩ, similar ID, package and gate charge. Vendor families to check for equivalents: Nexperia (BUK series), Infineon (BSC family), STMicro (STx/SiR series) and Vishay (SiR/SiHG). Provide your exact specs or circuit to get precise replacements.

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