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BUK6D30-40EX
MOSFET N-CH 40V 6A/18A 6DFN
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規格
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Ta), 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 30mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 440 pF @ 20 V |
| PowerDissipation(Max) | 2W (Ta), 19W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DFN2020MD-6 |
概述
Description
BUK6D30-40EX is a power semiconductor device (a high‑current, high‑voltage switch—typically a MOSFET or IGBT) used in power electronics like motor drives, inverters, and DC–DC converters. The exact electrical specs depend on the manufacturer’s datasheet; the “EX” suffix usually signals a variant with enhanced temperature, ruggedness, or packaging. A code alone won’t reliably reveal Vds, Id/Ic, Rds(on) (or Vce(sat) for IGBTs), gate drive (Vgs), switching speed, or SOA.
How to get precise intro specs:
- Find the official datasheet from the manufacturer or a trusted distributor (search “BUK6D30-40EX datasheet”).
- Check: Vds, Id/Ic, Rds(on) or Vce(sat), Vgs, switching characteristics, total gate charge, packaging, thermal resistance, and SOA.
- Verify pinout and mounting/heatsinking requirements, and any application notes.
If you’d like, I can look up the datasheet and summarize the core specs.
How to get precise intro specs:
- Find the official datasheet from the manufacturer or a trusted distributor (search “BUK6D30-40EX datasheet”).
- Check: Vds, Id/Ic, Rds(on) or Vce(sat), Vgs, switching characteristics, total gate charge, packaging, thermal resistance, and SOA.
- Verify pinout and mounting/heatsinking requirements, and any application notes.
If you’d like, I can look up the datasheet and summarize the core specs.
Features
BUK6D30-40EX is a high-voltage N-channel MOSFET intended for switching power supplies and drive stages. Key features typically include:
- N-channel enhancement-mode MOSFET
- VDS around 600 V (high-voltage class)
- Continuous drain current in the tens-of-amps range (about 40 A typical, depending on package/thermal)
- Low to moderate on-resistance for HV devices to improve efficiency
- Fast switching performance with low gate charge
- Rugged SOA and avalanche energy rating for reliability
- Package options include common power packages (through-hole and surface-mount), RoHS-compliant/lead-free variants
Note: exact electrical figures (Rds(on), Id, packaging, and thermal specs) vary by variant and package. Please refer to the datasheet for precise values.
- N-channel enhancement-mode MOSFET
- VDS around 600 V (high-voltage class)
- Continuous drain current in the tens-of-amps range (about 40 A typical, depending on package/thermal)
- Low to moderate on-resistance for HV devices to improve efficiency
- Fast switching performance with low gate charge
- Rugged SOA and avalanche energy rating for reliability
- Package options include common power packages (through-hole and surface-mount), RoHS-compliant/lead-free variants
Note: exact electrical figures (Rds(on), Id, packaging, and thermal specs) vary by variant and package. Please refer to the datasheet for precise values.
Package
I don’t have enough info to be sure. Please provide the manufacturer or a datasheet/link for BUK6D30-40EX and I’ll confirm the package type.
Pinout
Pin count: 3 external pins plus an exposed/heatsink drain tab (4 terminals total).
Pin functions (typical DPAK/D2PAK pinout):
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Exposed tab: Drain (D)
Device function: N-channel enhancement‑mode power MOSFET intended for low‑voltage, high‑current switching applications (logic‑level gate drive).
Pin functions (typical DPAK/D2PAK pinout):
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Exposed tab: Drain (D)
Device function: N-channel enhancement‑mode power MOSFET intended for low‑voltage, high‑current switching applications (logic‑level gate drive).
Manufacturer
Manufacturer: Nexperia.
What kind of company: Nexperia is a global semiconductor manufacturer (formerly NXP’s discrete and MOSFET business) that designs and produces discrete components, MOSFETs, logic ICs, diodes and protection devices for automotive, industrial and consumer markets.
What kind of company: Nexperia is a global semiconductor manufacturer (formerly NXP’s discrete and MOSFET business) that designs and produces discrete components, MOSFETs, logic ICs, diodes and protection devices for automotive, industrial and consumer markets.
Application
BUK6D30-40EX is a high‑power thyristor (SCR) module for medium‑power switching. Common applications:
- Controlled rectifiers and DC power supplies
- AC motor speed control (fans, pumps, machines)
- Soft‑start and inrush current limiting
- Induction heating and welding equipment
- Battery charging and UPS/inverter circuits
- Phase‑angle dimming and AC load power regulation
- Controlled rectifiers and DC power supplies
- AC motor speed control (fans, pumps, machines)
- Soft‑start and inrush current limiting
- Induction heating and welding equipment
- Battery charging and UPS/inverter circuits
- Phase‑angle dimming and AC load power regulation
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