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BSZ076N06NS3G

Name: BSZ076N06NS3G
Rating: 4.7 (12 reviews)

OPTLMOS N-CHANNEL POWER MOSFET

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規格

Supplier	Rochester Electronics, LLC
Package	Bulk
ProductStatus	Active

概述

Description

BSZ076N06NS3G is a N‑channel, enhancement‑mode power MOSFET. It’s designed as a switching element in power electronics (DC‑DC converters, motor drivers, load switches, etc.).
Key ideas:
- Type: N‑channel power MOSFET in a surface‑mount S3G package.
- Likely voltage rating: around 60 V (as suggested by the “06” in the part code).
- Current and conductance: rated for several amperes with low on‑resistance to minimize losses.
- Gate: standard or logic‑level drive (check the datasheet for Vgs(th) and Rds(on) at Vgs=4.5–10 V).
- Features: fast switching, good thermal performance with proper heatsinking, ruggedness suitable for high‑di/dt and transient conditions.
Use it as a high/low‑side switch in power stages. For exact numbers (Vds, Id, Rds(on), Vgs(th), package details, thermal limits), consult the official datasheet. If you’d like, I can pull the key specs from the datasheet.

Features

BSZ076N06NS3G is a 60 V N-channel power MOSFET. Key features typically include:
- N-channel enhancement mode, trench/gate structure for low Rds(on)
- 60 V Vds rating with robust avalanche/energy handling
- Very low on-resistance (milliohms range) for high efficiency
- High continuous current capability and fast switching
- Logic-level or near-logic-level gate-drive suitability with low gate charge
- Good thermal performance in the S3G package (surface-mount)
- Suitable for DC-DC converters, motor drives, and other power-management/applications
For exact numbers (Rds(on) at 4.5–10 V, Id, Qg, EAS, packaging details), please consult the datasheet.

Pinout

Pin count: 3 pins.
Function: N-channel enhancement‑mode power MOSFET used as a switch in power electronics (e.g., DC‑DC converters, high/low-side switching).
Pinout (typical convention): Gate (G), Drain (D), Source (S).

Manufacturer

Manufacturer: Infineon Technologies AG.
Type of company: A German multinational semiconductor manufacturer specializing in power semiconductors (MOSFETs, IGBTs), automotive and industrial ICs, power-management solutions, microcontrollers and sensors.

Application

BSZ076N06NS3G is a high-speed N‑channel MOSFET used as a power switch. Typical application areas include:
- Switching regulators (buck/boost) and point‑of‑load converters
- DC motor drivers and controlled loads
- Solar charge controllers and inverters
- Automotive and industrial power management (load switches, protection)
- General power supplies, UPS, and other high‑efficiency switching applications

Equivalent

I don’t have live datasheet access. Please share the BSZ076N06NS3G key specs (VDS, RDS(on) @ VGS, package, ID, Qg) and I’ll list direct, drop‑in equivalents (same voltage, RDS(on), package and gate charge).