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BSS83PH6327
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規格
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Operating Temperature | -55℃~+150℃ |
| RDS(on) | 2Ω@4.5V,0.27A |
| Drain to Source Voltage | 60V |
| Pd - Power Dissipation | 360mW |
| Current - Continuous Drain(Id) | 330mA |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF@25V |
| Input Capacitance(Ciss@Vds) | 78pF@25V |
| Gate Charge(Qg) | 3.57nC@10V |
概述
Description
BSS83PH6327 is a specific identifier for a course or program, likely related to a particular academic discipline or institution. It may pertain to a subject such as Business, Science, or Social Sciences, often indicating a specialized focus or module. The alphanumeric code typically denotes the course level, subject area, and possibly the semester it’s offered.
The "BSS" could refer to a specific department, while "83" might indicate a cohort or year, and "PH6327" could represent a unique course number or title. Understanding the context of this identifier involves consulting the relevant educational institution's catalog or course guide for precise details on the content, prerequisites, and objectives of BSS83PH6327.
The "BSS" could refer to a specific department, while "83" might indicate a cohort or year, and "PH6327" could represent a unique course number or title. Understanding the context of this identifier involves consulting the relevant educational institution's catalog or course guide for precise details on the content, prerequisites, and objectives of BSS83PH6327.
Features
The BSS83PH6327 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for various electronic applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 170mA, making it ideal for low-power switching.
3. Low On-Resistance: With a maximum R_DS(on) of about 0.8Ω at V_GS of 10V, it ensures minimal power loss during operation.
4. Fast Switching Speed: The device offers rapid switching capabilities, enhancing performance in fast signal applications.
5. Compact Package: Available in a SOT-23 package, it provides a small footprint for space-constrained designs.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, enabling operation with low control voltages.
7. RoHS Compliant: The BSS83PH6327 is compliant with environmental standards, making it suitable for modern electronic designs.
These features make the BSS83PH6327 a versatile choice for various applications including amplifiers, level shifters, and low-side switching.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for various electronic applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 170mA, making it ideal for low-power switching.
3. Low On-Resistance: With a maximum R_DS(on) of about 0.8Ω at V_GS of 10V, it ensures minimal power loss during operation.
4. Fast Switching Speed: The device offers rapid switching capabilities, enhancing performance in fast signal applications.
5. Compact Package: Available in a SOT-23 package, it provides a small footprint for space-constrained designs.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, enabling operation with low control voltages.
7. RoHS Compliant: The BSS83PH6327 is compliant with environmental standards, making it suitable for modern electronic designs.
These features make the BSS83PH6327 a versatile choice for various applications including amplifiers, level shifters, and low-side switching.
Package
The BSS83PH6327 is packaged in a SOT-23 surface-mount package.
Pinout
The BSS83PH6327 is a N-channel MOSFET with a pin count of 3. Its pins serve the following functions:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): This is where the current flows out of the MOSFET when it's in the on state.
3. Source (S): This pin allows the current to flow into the MOSFET.
The BSS83PH6327 is commonly used in low-power switching applications, signal amplification, and as a digital switch in various electronic circuits.
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): This is where the current flows out of the MOSFET when it's in the on state.
3. Source (S): This pin allows the current to flow into the MOSFET.
The BSS83PH6327 is commonly used in low-power switching applications, signal amplification, and as a digital switch in various electronic circuits.
Manufacturer
The BSS83PH6327 is manufactured by NXP Semiconductors. NXP is a global semiconductor company that specializes in advanced automotive, security, and IoT (Internet of Things) solutions. Originally part of Philips, NXP has developed a strong presence in the semiconductor industry by providing a wide range of products, including analog and digital integrated circuits, microcontrollers, and RF components. Their offerings cater to various sectors, including automotive, industrial, and consumer electronics. NXP is known for its focus on innovation and technology that enhances connectivity and security in electronic devices.
Application
The BSS83PH6327 is an N-channel MOSFET primarily used in low-voltage applications such as switching and amplification in electronic circuits. Common application areas include power management, signal switching, and low-power motor control. It is also utilized in consumer electronics, communication devices, and automotive electronics for efficient power handling and signal processing.
Equivalent
The BSS83PH6327 is an N-channel MOSFET. Equivalent products include the BSS83, BS170, 2N7000, and 2N7002. Ensure to check specifications like voltage rating, current rating, and package type for compatibility in your application.
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