圖片僅供參考
BSS806NH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
- 製造商
- 製造商。 部分 #BSS806NH6327XTSA1
- 包
- 資料表 BSS806NH6327XTSA1 DataSheet
- 有現貨的23749
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 2.5V |
| RdsOn(Max)@IdVgs | 57mOhm @ 2.3A, 2.5V |
| Vgs(th)(Max)@Id | 750mV @ 11µA |
| GateCharge(Qg)(Max)@Vgs | 1.7 nC @ 2.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 529 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT23 |
概述
Description
The BSS806NH6327XTSA1 is a specific model of a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features low on-resistance and fast switching capabilities, making it suitable for power management in various electronic devices.
Key specifications typically include a maximum drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). The BSS806 is commonly used in applications such as power supplies, motor drivers, and other circuits requiring efficient power handling. It is packaged in a compact surface-mount format, allowing for easy integration into modern circuit designs.
This MOSFET is popular among engineers due to its reliability and performance, contributing to improved energy efficiency in consumer electronics, automotive systems, and industrial equipment. Always refer to the manufacturer's datasheet for detailed electrical characteristics and recommended operating conditions.
Key specifications typically include a maximum drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). The BSS806 is commonly used in applications such as power supplies, motor drivers, and other circuits requiring efficient power handling. It is packaged in a compact surface-mount format, allowing for easy integration into modern circuit designs.
This MOSFET is popular among engineers due to its reliability and performance, contributing to improved energy efficiency in consumer electronics, automotive systems, and industrial equipment. Always refer to the manufacturer's datasheet for detailed electrical characteristics and recommended operating conditions.
Features
The BSS806NH6327XTSA1 is an N-channel MOSFET designed for a variety of switching and amplification applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 60V, making it suitable for medium-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) rating of approximately 30A, allowing for significant power handling.
3. Low On-Resistance: With a low R_DS(on) value, it minimizes power loss and heat generation during operation, enhancing efficiency.
4. Fast Switching Speed: The device supports rapid switching, ideal for high-frequency applications.
5. Thermal Performance: It comes in a compact package that aids in efficient heat dissipation.
6. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is suitable for logic-level control, allowing easy interfacing with microcontrollers.
7. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heatsinking.
These characteristics make the BSS806NH6327XTSA1 an excellent choice for power management, motor control, and other electronic applications requiring efficient switching.
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 60V, making it suitable for medium-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) rating of approximately 30A, allowing for significant power handling.
3. Low On-Resistance: With a low R_DS(on) value, it minimizes power loss and heat generation during operation, enhancing efficiency.
4. Fast Switching Speed: The device supports rapid switching, ideal for high-frequency applications.
5. Thermal Performance: It comes in a compact package that aids in efficient heat dissipation.
6. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is suitable for logic-level control, allowing easy interfacing with microcontrollers.
7. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heatsinking.
These characteristics make the BSS806NH6327XTSA1 an excellent choice for power management, motor control, and other electronic applications requiring efficient switching.
Package
The BSS806NH6327XTSA1 is packaged in a small, surface-mount SOT-23 package. This compact design is ideal for applications requiring space efficiency, making it suitable for various electronic circuits.
Pinout
The BSS806NH6327XTSA1 is an N-channel MOSFET with a total of 3 pins. The pin configuration typically consists of the following functions:
1. Gate (G) - Controls the MOSFET's operation; applying a voltage to this pin turns the device on or off.
2. Drain (D) - The pin through which the current flows out of the MOSFET when it is on.
3. Source (S) - The pin through which the current enters the MOSFET.
This device is commonly used in switching applications and power management due to its low on-resistance and high-speed switching capabilities.
1. Gate (G) - Controls the MOSFET's operation; applying a voltage to this pin turns the device on or off.
2. Drain (D) - The pin through which the current flows out of the MOSFET when it is on.
3. Source (S) - The pin through which the current enters the MOSFET.
This device is commonly used in switching applications and power management due to its low on-resistance and high-speed switching capabilities.
Manufacturer
The BSS806NH6327XTSA1 is manufactured by Nexperia, a company that specializes in the production of discrete, logic, and MOSFET semiconductor devices. Nexperia was established as a standalone company in 2017, having been spun off from NXP Semiconductors. It focuses on providing a wide range of high-performance semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Nexperia is known for its expertise in manufacturing high-quality components, with an emphasis on efficiency and reliability.
Application
The BSS806NH6327XTSA1 is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, motor controllers, and load switching in consumer electronics, automotive systems, and industrial automation. Its high efficiency and fast switching capabilities make it suitable for applications requiring low conduction losses and thermal management.
Equivalent
The BSS806NH6327XTSA1 is an N-channel MOSFET. Equivalent products include the IRF840, STP16NF06, and BSS123. However, specific replacements depend on voltage, current ratings, package type, and switching characteristics. Always consult the datasheets for exact specifications to ensure compatibility with your application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25R8035FM1IL0
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L6433FM2I-08G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX29F040CQI-70G
Macronix
-
MX29F040CTI-70G
Macronix
-
MX29F800CBTI-70G
Macronix