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BSS308PE

Name: BSS308PE
Rating: 4.7 (12 reviews)

MOSFET P-CH 30V 2A SOT23

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規格

Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	1V @ 11µA
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 15 V
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

概述

Description

BSS308PE is typically a course focused on Business and Social Sciences, emphasizing the intersection of business principles with social and ethical considerations. Students explore topics such as organizational behavior, management strategies, and the impact of business decisions on society and the environment. The course often involves case studies, fostering critical thinking and analytical skills as students evaluate real-world business scenarios.
Key learning outcomes may include understanding corporate social responsibility, ethical decision-making, and the role of businesses in promoting sustainable practices. Engaging discussions, group projects, and research assignments are common components, aiming to prepare students for challenges in the dynamic business landscape.
Overall, BSS308PE equips students with the knowledge and skills necessary to navigate the complexities of the modern business world while considering their social implications.

Features

The BSS308PE is a low-voltage N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: Typically, it supports a maximum drain-source voltage (V_DS) of around 30V.
2. Current Rating: It can handle continuous drain currents up to 3.7A at room temperature.
3. On-Resistance (R_DS(on)): It has a low on-resistance, which enhances efficiency by minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is low, allowing for effective switching with lower gate drive voltages.
5. Package Type: Usually available in a compact SOT-23 package, making it suitable for space-constrained applications.
6. Applications: Ideal for low-voltage driver circuits, power management, and switching in consumer electronics, automotive, and industrial applications.
These features contribute to its reliability and performance in various electronic circuits, making it a popular choice among designers.

Package

The BSS308PE is typically packaged in a SOT-23 surface-mount package. This compact package is designed for efficient thermal performance and ease of integration into electronic circuits.

Pinout

The BSS308PE is a N-channel MOSFET, typically used in low-power switching applications. It comes in a TO-92 package, which has three pins.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): The terminal where the load is connected. When the MOSFET is on, current flows from drain to source.
3. Source (S): Connected to ground or the negative side of the circuit; it is the terminal through which current exits the device.
The BSS308PE is characterized by its low on-resistance and fast switching capabilities, making it suitable for applications like signal switching and low voltage power management.

Manufacturer

The BSS308PE is manufactured by NXP Semiconductors, a global semiconductor company headquartered in Eindhoven, Netherlands. NXP specializes in designing and producing a wide range of integrated circuits and semiconductor solutions, particularly focusing on automotive, industrial, and Internet of Things (IoT) applications. The company was formed from the spun-off division of Philips and has since become a key player in the semiconductor industry, offering innovative products that enable connectivity and security in various electronic devices. NXP's portfolio includes microcontrollers, processors, and RF solutions, catering to diverse markets such as automotive, smart home, and mobile communications.

Application

BSS308PE is a high-voltage N-channel MOSFET commonly used in applications such as power management, switching power supplies, and motor control. Its features make it suitable for high-frequency applications, LED lighting, and battery management systems. Additionally, it can be used in RF amplifiers and as a switch in various electronic circuits, enabling efficient energy conversion and distribution.

Equivalent

The BSS308PE is an N-channel MOSFET. Equivalent products include the 2N7000, BS170, and BSS138. Always check specific datasheets for exact characteristics, such as voltage and current ratings, to ensure compatibility in your application.