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BSS139H6327
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規格
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Operating Temperature | -55℃~+150℃ |
| RDS(on) | 30Ω@0V,15mA |
| Drain to Source Voltage | 250V |
| Pd - Power Dissipation | 360mW |
| Current - Continuous Drain(Id) | 100mA |
| Reverse Transfer Capacitance (Crss@Vds) | 3.3pF |
| Input Capacitance(Ciss@Vds) | 76pF |
| Gate Charge(Qg) | 3.5nC@5V |
| Number | 1 N-channel |
概述
Description
BSS139H6327 refers to a specific variant of the BSS139, which is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is commonly used in low voltage applications due to its ability to switch electronic signals efficiently. The BSS139 features a low on-resistance, high-speed switching capabilities, and is suitable for both analog and digital circuits.
Key specifications often include a maximum drain-source voltage (V_DS) of around 60V, a continuous drain current (I_D) rating of 200mA, and a low threshold voltage (V_GS(th)). This makes it ideal for applications such as switching power supplies, low-side switching, and level shifting. The BSS139H6327 designation might indicate a specific manufacturing batch or package type, which can be relevant for sourcing and replacement in electronic designs. Overall, it is a versatile component used widely in consumer electronics, automotive, and industrial applications.
Key specifications often include a maximum drain-source voltage (V_DS) of around 60V, a continuous drain current (I_D) rating of 200mA, and a low threshold voltage (V_GS(th)). This makes it ideal for applications such as switching power supplies, low-side switching, and level shifting. The BSS139H6327 designation might indicate a specific manufacturing batch or package type, which can be relevant for sourcing and replacement in electronic designs. Overall, it is a versatile component used widely in consumer electronics, automotive, and industrial applications.
Features
The BSS139H6327 is a N-channel MOSFET designed for low-voltage, high-speed switching applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of applications.
2. Current Rating: It can handle continuous drain currents (I_D) of up to 1.6A, providing robust performance for driving loads.
3. R_DS(on): The on-resistance is low, generally around 3.5 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient power use and minimal heat generation.
4. Gate Threshold Voltage: The V_GS(th) ranges from 1V to 3V, allowing for operation with low gate voltages.
5. Package Type: Typically available in the SOT-23 package, contributing to space-saving designs on PCBs.
6. Fast Switching Speed: It supports high-speed switching, making it ideal for applications such as power management, signal switching, and general-purpose switching.
These features make the BSS139H6327 suitable for a wide range of electronic and electrical applications.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of applications.
2. Current Rating: It can handle continuous drain currents (I_D) of up to 1.6A, providing robust performance for driving loads.
3. R_DS(on): The on-resistance is low, generally around 3.5 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient power use and minimal heat generation.
4. Gate Threshold Voltage: The V_GS(th) ranges from 1V to 3V, allowing for operation with low gate voltages.
5. Package Type: Typically available in the SOT-23 package, contributing to space-saving designs on PCBs.
6. Fast Switching Speed: It supports high-speed switching, making it ideal for applications such as power management, signal switching, and general-purpose switching.
These features make the BSS139H6327 suitable for a wide range of electronic and electrical applications.
Package
The BSS139H6327 is typically packaged in a SOT-23 surface mount package. This small package is commonly used for transistors, providing a compact footprint for circuit design.
Pinout
The BSS139H6327 is an N-channel MOSFET with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - The drain is the terminal where the current flows out of the MOSFET. It connects to the load.
3. Source (S) - The source pin serves as the terminal where current enters the MOSFET.
The BSS139H6327 is commonly used in low-power applications for switching and amplification purposes, with a maximum drain-source voltage of 60V and a continuous drain current of 200 mA.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - The drain is the terminal where the current flows out of the MOSFET. It connects to the load.
3. Source (S) - The source pin serves as the terminal where current enters the MOSFET.
The BSS139H6327 is commonly used in low-power applications for switching and amplification purposes, with a maximum drain-source voltage of 60V and a continuous drain current of 200 mA.
Manufacturer
The BSS139H6327 is manufactured by Nexperia, a company that specializes in semiconductor products. Nexperia is known for its focus on producing discrete, logic, and MOSFET components. It was spun off from NXP Semiconductors in 2017 and operates as an independent supplier in the semiconductor industry. The company emphasizes high-quality, reliable products designed for various applications, including automotive, industrial, and consumer electronics. Nexperia's offerings include a wide range of integrated circuits and discrete devices, making it a key player in the global electronics supply chain.
Application
BSS139H6327 is an N-channel MOSFET commonly used in power management applications, such as low-side switching, motor control, and DC-DC converters. It is suitable for battery-powered devices, LED drivers, and general-purpose switching applications due to its low on-resistance and fast switching capabilities. Its compact package also makes it ideal for space-constrained designs in consumer electronics and automotive applications.
Equivalent
The BSS139H6327 is an N-channel MOSFET. Equivalent products include the 2N7000, BS170, and BSS138. Ensure to check specifications like voltage, current ratings, and package type for compatibility with your specific application.
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