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BSS123NH6327
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規格
| Manufacturer | Infineon Technologies |
| Package | TO-236-3 |
| Operating Temperature | -55℃~+150℃ |
| RDS(on) | 6Ω@10V,0.19A |
| Drain to Source Voltage | 100V |
| Pd - Power Dissipation | 500mW |
| Current - Continuous Drain(Id) | 190mA |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF@25V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V |
| Gate Charge(Qg) | 900pC@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.9pF@25V |
概述
Description
BSS123NH6327 is a specific model number that typically refers to a component in the field of electronics, often a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are essential in power management and switching applications, serving as electronic switches that can control the flow of current.
The BSS123 commonly features low on-resistance and fast switching speeds, making it suitable for various applications such as amplifiers, power supplies, and high-frequency switching. Key parameters to consider include maximum voltage, current ratings, gate threshold voltage, and package type.
When working with the BSS123NH6327, it’s crucial to reference the datasheet for detailed specifications and application guidelines to ensure optimal performance, reliability, and safety in circuit designs.
The BSS123 commonly features low on-resistance and fast switching speeds, making it suitable for various applications such as amplifiers, power supplies, and high-frequency switching. Key parameters to consider include maximum voltage, current ratings, gate threshold voltage, and package type.
When working with the BSS123NH6327, it’s crucial to reference the datasheet for detailed specifications and application guidelines to ensure optimal performance, reliability, and safety in circuit designs.
Features
The BSS123NH6327 is an N-channel MOSFET designed for various applications such as switching and amplification. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 9.2A, allowing for significant load handling.
3. Low R_DS(on): With a low on-resistance, typically around 0.15 ohms, it minimizes power loss during operation, enhancing efficiency.
4. Fast Switching Speed: This MOSFET offers rapid switching capabilities, making it ideal for high-frequency applications.
5. Package: It usually comes in a compact SO-8 package, which is suitable for surface mounting and enhances thermal management.
Overall, the BSS123NH6327 is well-regarded for its reliability and performance in power management and switching applications.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 9.2A, allowing for significant load handling.
3. Low R_DS(on): With a low on-resistance, typically around 0.15 ohms, it minimizes power loss during operation, enhancing efficiency.
4. Fast Switching Speed: This MOSFET offers rapid switching capabilities, making it ideal for high-frequency applications.
5. Package: It usually comes in a compact SO-8 package, which is suitable for surface mounting and enhances thermal management.
Overall, the BSS123NH6327 is well-regarded for its reliability and performance in power management and switching applications.
Package
The BSS123NH6327 is typically packaged in a SOT-23 (Surface-Mounted Device) package type, which is a compact, surface-mount package commonly used for transistors and other small electronic components.
Pinout
The BSS123NH6327 is a N-channel MOSFET housed in a SOT-23 package. It has three pins, with the following functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the device on or off.
2. Drain (D): This is the pin through which the output current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative voltage and serves as the return path for the current.
In summary, the BSS123NH6327 has a pin count of three, serving as Gate, Drain, and Source, facilitating switching and amplification in electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate turns the device on or off.
2. Drain (D): This is the pin through which the output current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or negative voltage and serves as the return path for the current.
In summary, the BSS123NH6327 has a pin count of three, serving as Gate, Drain, and Source, facilitating switching and amplification in electronic circuits.
Manufacturer
The BSS123NH6327 is a product manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the design and production of discrete, logic, and MOSFET components. The company was formed as a spin-off from NXP Semiconductors and focuses on delivering high-quality, reliable semiconductor devices for a variety of applications, including automotive, industrial, and consumer electronics. Nexperia is known for its expertise in manufacturing and supplying a broad range of semiconductor products, including transistors, diodes, and integrated circuits.
Application
BSS123NH6327 is an N-channel MOSFET used in various applications such as power management, switching circuits, and low-voltage high-speed applications. It's suitable for load switching, motor control, and LED drivers in consumer electronics. Its low on-resistance and fast switching capabilities make it ideal for DC-DC converters and RF applications.
Equivalent
The BSS123NH6327 is a N-channel MOSFET. Equivalent products include the BSS123, 2N7000, and BS170. For higher specifications, consider the IRLZ44N or BSS138. Always verify the specific electrical characteristics and package types when substituting components.
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