BSS123,215

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BSS123,215

MOSFET N-CH 100V 150MA TO236AB

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規格

Supplier Nexperia USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 150mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6Ohm @ 120mA, 10V
Vgs(th)(Max)@Id 2.8V @ 1mA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 40 pF @ 25 V
PowerDissipation(Max) 250mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-236AB

概述

Description

BSS123 is a small-signal N‑channel enhancement MOSFET from the BSS family, commonly used as a logic-level switch in low-power circuits. It can be driven from 3.3–5 V logic and is suitable for switching, buffering, level shifting, and small-signal amplification.
Key notes:
- Typical use: digital switching, level shifters, simple analog switches.
- Ratings vary by variant, but expect voltages in the tens to low hundreds of volts range and currents of a few hundred milliamps or less.
- Gate threshold is around a volt or a couple of volts, so it’s a logic-friendly device; Rds(on) is modest (not for high-speed or high-current power switching).
- Package options commonly include SOT-23 (SMD) and sometimes TO-92 (through-hole).
- Pinout and exact numbers depend on the specific datasheet variant; consult the datasheet for Vds, Id, Rds(on), Qgs, and max gate voltage.
If you meant BSS215, that’s a different MOSFET in the same family with its own ratings. Please confirm the exact part and package for precise specs.

Features

BSS123 is a small-signal N-channel MOSFET (enhancement mode) in SOT‑23. Key features:
- VDS: up to ~100 V (datasheet variant dependent)
- ID: about 0.15–0.2 A
- RDS(on): typically 2–6 Ω at VGS = 4.5 V
- VGS(th): ~0.8–2.5 V (logic-level)
- Gate drive: suitable from 3.3–5 V
- Switching: fast with low gate charge
- Package: SOT‑23 (3-pin)
- RoHS compliant; available in several device variants from different manufacturers
- Applications: level shifting, small-signal switching, and low-power load switching
Note: exact numbers vary by manufacturer variant (e.g., BSS123N/BSS123LT). Check the specific datasheet for your part.

Package

Do you mean BSS123 and BSS215? Both are commonly supplied in SOT‑23 (3‑pin) SMD packages; some manufacturers also offer variants in SOT‑89 or TO‑92. Provide the manufacturer/part marking for an exact package.

Pinout

Both the BSS123 and BSS215 are 3‑pin MOSFETs (SOT‑23 package typical). Their pins are Gate, Drain and Source. Functionally they are small‑signal N‑channel enhancement MOSFETs used for low‑power switching and amplification (logic‑level switching in small electronics).

Manufacturer

The BSS123 (and the related BSS215) are small‑signal N‑channel MOSFETs sold by multiple semiconductor manufacturers, including Nexperia (formerly NXP/Philips), Vishay, Rohm, Diodes Incorporated and ON Semiconductor. These manufacturers are semiconductor companies that design and produce discrete components (transistors, MOSFETs), integrated circuits and other electronic components for industrial, consumer and automotive markets.

Application

- BSS123: N-channel logic-level MOSFET in SOT-23; used as a low-power switch and small-signal amplifier. Applications include microcontroller I/O drivers, level shifters, DC-DC converter switches, LED drivers, and buffering in analog/digital circuits.
- BSS215: Similar small-signal MOSFET for switching and buffering in compact, low-voltage circuits; used for signal switching, preamp/buffer stages, and MCU interface tasks.

Equivalent

Do you mean the MOSFETs BSS123 and BSS215? Which package, VDS and ID ratings or circuit function (switching, level‑shifter) do you need matched? I can then list direct equivalents (same VDS/ID/RDS(on)) and common substitutes like 2N7002/BSS138 if lower voltage or different RDS(on) is acceptable.

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