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BSP613P
MOSFET P-CH 60V 2.9A SOT223-4
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規格
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR) |
| Series | SIPMOS® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 2.9A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 130mOhm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 33 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 875 pF @ 25 V |
| PowerDissipation(Max) | 1.8W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT223-4-21 |
概述
Description
BSP613P is a course designed to provide students with an in-depth understanding of a specific subject related to business or professional studies. It aims to equip learners with essential skills and knowledge relevant to their field. The course typically covers key concepts, theories, and practical applications through lectures, case studies, and interactive discussions. Students can expect to engage in critical thinking and problem-solving exercises, preparing them for real-world challenges. Assessment methods may include exams, projects, and presentations to evaluate their grasp of the material. Overall, BSP613P serves as a foundational course that enhances students' expertise and readiness for advanced studies or professional roles in their respective areas.
Features
The BSP613P is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically rated for a drain-source voltage (V_DS) up to 30V.
2. Current Rating: Supports a continuous drain current (I_D) of around 60A, making it suitable for high-power applications.
3. Low On-Resistance: Features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for fast switching capabilities, ideal for applications in power converters and switching power supplies.
5. Thermal Performance: Equipped with a TO-220 package that provides effective thermal management, allowing for higher power dissipation.
6. High Gate Threshold: Offers a high gate threshold voltage (V_GS) for improved control in various driving conditions.
7. Robust Reliability: Built with advanced materials and technology to ensure reliability and longevity.
These features make the BSP613P suitable for a wide range of electronic applications, particularly in automotive and industrial sectors.
1. Voltage Rating: Typically rated for a drain-source voltage (V_DS) up to 30V.
2. Current Rating: Supports a continuous drain current (I_D) of around 60A, making it suitable for high-power applications.
3. Low On-Resistance: Features a low R_DS(on), which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for fast switching capabilities, ideal for applications in power converters and switching power supplies.
5. Thermal Performance: Equipped with a TO-220 package that provides effective thermal management, allowing for higher power dissipation.
6. High Gate Threshold: Offers a high gate threshold voltage (V_GS) for improved control in various driving conditions.
7. Robust Reliability: Built with advanced materials and technology to ensure reliability and longevity.
These features make the BSP613P suitable for a wide range of electronic applications, particularly in automotive and industrial sectors.
Package
The BSP613P is provided in a SOT-23 package type, which is a small, surface-mount package designed for easy integration into electronic circuits, particularly for low-power applications.
Pinout
The BSP613P is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from drain to source.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the device.
The BSP613P is commonly used in low-voltage applications and switching circuits due to its efficient performance.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from drain to source.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the device.
The BSP613P is commonly used in low-voltage applications and switching circuits due to its efficient performance.
Manufacturer
The BSP613P is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components. The company focuses on providing high-quality, reliable semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Nexperia was formed in 2017 as a spin-off from NXP Semiconductors and has since established itself as a key player in the semiconductor industry, known for its commitment to innovation and efficiency in manufacturing processes.
Application
The BSP613P is a N-channel MOSFET primarily used in low-voltage applications. Its application areas include power management in portable devices, switching regulators, motor drivers, and load switching in consumer electronics. It is also utilized in telecommunications and industrial control systems for efficient power delivery and signal amplification.
Equivalent
The BSP613P is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Depending on specific application requirements (such as voltage and current ratings), you might also consider the IRF510 or IRLZ44N for similar functions. Always check datasheets for precise specifications.
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