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BSP149H6327XTSA1

Name: BSP149H6327XTSA1
Rating: 4.7 (12 reviews)

MOSFET N-CH 200V 660MA SOT223-4

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包 PG-SOT223-4
資料表 BSP149H6327XTSA1 DataSheet
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規格

Package	Tape & Reel (TR),Cut Tape (CT)
Series	SIPMOS®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	660mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	0V, 10V
RdsOn(Max)@IdVgs	1.8Ohm @ 660mA, 10V
Vgs(th)(Max)@Id	1V @ 400µA
GateCharge(Qg)(Max)@Vgs	14 nC @ 5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	430 pF @ 25 V
FETFeature	Depletion Mode
PowerDissipation(Max)	1.8W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	PG-SOT223-4

概述

Description

The BSP149H6327XTSA1 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features low on-resistance and high-speed switching capabilities, making it suitable for power management tasks, including voltage regulation and load switching in consumer electronics, automotive, and industrial applications.
Typically, it comes in a compact surface-mount package, enhancing PCB space efficiency. Key specifications include a maximum drain-source voltage (VDS) of around 30V and a continuous drain current (ID) of approximately 2.5A, depending on thermal conditions. The device is often characterized by fast switching times, which contribute to improved system efficiency.
Overall, the BSP149H6327XTSA1 is a versatile component favored for its reliability and performance in modern electronic circuits. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.

Features

The BSP149H6327XTSA1 is a high-performance N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It typically handles a drain-source voltage (V_DS) of up to 60V.
2. Current Handling: Capable of conducting continuous drain current (I_D) of approximately 2.5A.
3. R_DS(on): Low on-resistance, often around 0.2 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing for efficient switching.
5. Package Type: Available in a compact TO-220 package, facilitating heat dissipation and efficient PCB design.
6. Switching Speed: High-speed switching capabilities ideal for applications in power management, switching power supplies, and motor control.
7. Temperature Range: Operates effectively over a wide temperature range, enhancing reliability in various environments.
These attributes make the BSP149H6327XTSA1 suitable for a range of electronic applications requiring efficient and reliable switching performance.

Package

The BSP149H6327XTSA1 is typically available in a SOT-23 package type. This compact surface-mount package is designed for efficient space utilization in electronic circuits.

Pinout

The BSP149H6327XTSA1 is a dual N-channel MOSFET with a pin count of 8. Its primary function is to provide efficient switching capabilities in power management applications. The device is typically used in low-voltage and high-speed switching applications, such as power supplies, motor control, and automotive electronics.
The pin configuration includes:
1. Gate (G) – Controls the switching of the MOSFET.
2. Drain (D) – The terminal where current flows out.
3. Source (S) – The terminal where current flows in.
4. Common Pins – Shared gate and source connections for the dual MOSFET structure.
This component is designed for applications requiring compact size and high performance, allowing for effective thermal management and reduced on-resistance.

Manufacturer

The BSP149H6327XTSA1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing discrete, logic, and MOSFET components, focusing on high-performance semiconductor solutions for various applications. The company was formed from the divestiture of NXP Semiconductors' standard products division and is known for its commitment to high quality and reliability in semiconductor manufacturing. Nexperia serves multiple sectors, including automotive, industrial, and consumer electronics, contributing to the development of efficient electronic designs worldwide.

Application

The BSP149H6327XTSA1 is a N-channel MOSFET primarily used in low-voltage applications. Its application areas include power management, load switching, and signal amplification in consumer electronics, automotive systems, and industrial equipment. It is suitable for high-speed switching and low on-resistance, making it ideal for battery-powered devices and power supply circuits.

Equivalent

The BSP149H6327XTSA1 is a high-speed transistor typically used in RF applications. Equivalent products include the BS170, 2N7000, and MMBT3904. For specific applications, check data sheets for characteristics like V_DS, I_D, and switching speed to ensure compatibility.