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BSM25GD120DN2

Name: BSM25GD120DN2
Rating: 4.7 (12 reviews)

IGBT Modules 1200V 25A FL BRIDGE

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資料表 BSM25GD120DN2 DataSheet
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規格

Packaging	Tray
Standard Pack Qty	10

概述

Description

The BSM25GD120DN2 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. It features a voltage rating of 1200V and a continuous current rating of 25A, making it suitable for use in power converters, inverters, and industrial motor drives. SiC technology allows for higher switching frequencies and reduced energy losses compared to traditional silicon devices, leading to enhanced performance and efficiency.
Key characteristics include low on-resistance, high thermal conductivity, and excellent thermal stability, which enable the device to operate effectively at elevated temperatures. The BSM25GD120DN2 is particularly useful in applications such as renewable energy systems (like solar inverters), electric vehicle charging, and energy storage systems.
Its robust construction and reliability make it a preferred choice for engineers looking to improve the efficiency and performance of their power electronics designs.

Features

The BSM25GD120DN2 is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) module designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 1200V, suitable for medium voltage applications.
2. Current Rating: 25A, optimized for industrial drives and power converters.
3. Low On-State Voltage: Ensures efficient operation and reduced power losses.
4. Fast Switching Speed: Enhances performance in switching applications.
5. Thermal Performance: Features a robust thermal design for effective heat dissipation.
6. Integrated Diodes: Built-in freewheeling diodes provide efficient reverse recovery.
7. Compact Design: Facilitates easy integration into various systems.
8. Reliability: Designed for long operational life in demanding environments.
This module is ideal for applications like motor drives, renewable energy systems, and other power electronics requiring efficient control.

Package

The BSM25GD120DN2 is packaged in a DPAK (also known as TO-252) format. This package type is designed for surface mounting and provides good thermal performance for power semiconductor applications.

Pinout

The BSM25GD120DN2 is a 25A, 1200V silicon carbide (SiC) MOSFET module produced by Bosch. It features a total of 6 pins. The pin configuration includes:
1. Gate (G): Controls the switching of the device.
2. Source (S): Connected to the source terminal of the MOSFET.
3. Drain (D): Connected to the drain terminal where the load is attached.
4. Thermal pad (T): Used for heat dissipation.
The BSM25GD120DN2 is designed for high-efficiency power applications, especially in the automotive and industrial sectors, such as inverters and converters. Its SiC technology enables higher switching frequencies and better thermal performance compared to traditional silicon devices.

Manufacturer

The BSM25GD120DN2 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in automotive, industrial power control, and security technologies. The company focuses on producing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors, catering to various sectors such as automotive, industrial automation, and consumer electronics. Infineon is recognized for its innovations in energy efficiency and power management solutions.

Application

The BSM25GD120DN2 is a 1200V, 25A IGBT module commonly used in industrial applications such as motor drives, inverters for renewable energy systems (solar, wind), uninterruptible power supplies (UPS), and induction heating. Its high efficiency and thermal performance make it suitable for power electronics in electric vehicles and traction applications as well.

Equivalent

The BSM25GD120DN2 is a 25A, 1200V IGBT module. Equivalent products include:
1. IGBT Modules:
- BSM25GD120DN1
- BSM25GD120D
- FZ1200R25KE3 (Infineon)
- CM200DY-24H (Mitsubishi)
Check datasheets for specifics on electrical characteristics to ensure compatibility.