BSC067N06LS3 G

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BSC067N06LS3 G

MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3

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規格

Packaging MouseReel
Standard Pack Qty 5000

概述

Description

BSC067N06LS3 G is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It features an N-channel configuration, which allows it to conduct current when a positive voltage is applied to the gate relative to the source. This transistor is designed for high-efficiency switching applications, making it suitable for power management, motor control, and various electronic circuits.
Key specifications often include a maximum drain-source voltage (V_DS), continuous drain current (I_D), and on-resistance (R_DS(on)), which determine its performance in different applications. The part number indicates specific characteristics such as packaging and threshold voltage ranges. This MOSFET is typically utilized in consumer electronics, automotive applications, and industrial systems due to its reliability and efficiency.
For detailed specifications, reference the manufacturer's datasheet, which provides critical information on electrical characteristics, thermal performance, and recommended operating conditions.

Features

The BSC067N06LS3 G is a N-channel MOSFET from Infineon Technologies, designed for power applications. Key features include:
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 67A, allowing for high-load capacity.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of around 7.6 mΩ, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: The device features a fast switching capability, which is beneficial for applications requiring rapid turn-on and turn-off cycles.
5. Package Type: The MOSFET is typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power supplies, motor control, and automotive applications.
These features make the BSC067N06LS3 G a reliable choice for various power management solutions.

Package

The BSC067N06LS3 G is packaged in a TO-220 form factor, which is a popular type of power package known for its effective thermal management and ease of mounting. This package is commonly used for power MOSFETs in various applications.

Pinout

The BSC067N06LS3 G is a N-channel MOSFET produced by Infineon Technologies. It features a total of 5 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. It allows current to flow when the MOSFET is turned on.
3. Source (S): This pin is connected to ground in typical applications. It completes the circuit for current flow when the device is active.
4. Body Diode: This internal feature allows current to flow in the reverse direction, providing protection against reverse polarity in some applications (not a pin, but an important characteristic).
5. Thermal Pad: Although not a pin, the thermal pad on the bottom aids in heat dissipation.
The BSC067N06LS3 G is known for its low on-resistance and high efficiency, making it suitable for various power management applications.

Manufacturer

The BSC067N06LS3 G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and microcontrollers. The company focuses on areas such as energy efficiency, mobility, and security, catering to various industries including automotive, industrial, and consumer electronics. Infineon is recognized for its innovation and commitment to advancing technology in these sectors.

Application

The BSC067N06LS3 G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and power supply circuits. Its low R_DS(on) reduces conduction losses, making it suitable for high-efficiency designs in consumer electronics, renewable energy systems, and electric vehicles. Additionally, it can be employed in switching applications where fast response times are crucial.

Equivalent

The BSC067N06LS3 G is a N-channel MOSFET from Infineon. Equivalent products include the IRF540, STP55NF06, and FDG628N. Always verify specifications like voltage, current ratings, and on-resistance to ensure compatibility in your application.

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