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BSC028N06LS3 G
MOSFETs N-Ch 60V 100A TDSON-8 OptiMOS 3
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概述
Description
BSC028N06LS3 G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It belongs to the N-channel MOSFET family, known for its high efficiency and fast switching capabilities, making it suitable for various applications, including power management, DC-DC converters, and motor drive circuits.
Key features of BSC028N06LS3 G include a low on-resistance, which minimizes power losses during operation, and a high maximum drain-source voltage rating, allowing it to handle significant power loads. It typically comes in a TO-220 package, facilitating easy heat dissipation.
The "G" in its designation indicates that this device is lead-free and compliant with RoHS (Restriction of Hazardous Substances) regulations, making it environmentally friendly. Overall, the BSC028N06LS3 G is favored by engineers for its reliability, efficiency, and versatility in electronic design.
Key features of BSC028N06LS3 G include a low on-resistance, which minimizes power losses during operation, and a high maximum drain-source voltage rating, allowing it to handle significant power loads. It typically comes in a TO-220 package, facilitating easy heat dissipation.
The "G" in its designation indicates that this device is lead-free and compliant with RoHS (Restriction of Hazardous Substances) regulations, making it environmentally friendly. Overall, the BSC028N06LS3 G is favored by engineers for its reliability, efficiency, and versatility in electronic design.
Features
The BSC028N06LS3 G is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated up to 28A, making it suitable for high-load applications.
3. RDS(on) Specification: It boasts a low on-resistance (R_DS(on)) of approximately 6.5 mΩ at a V_GS of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy driving in low-voltage applications.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: The device features fast switching capabilities, making it suitable for applications like DC-DC converters, power management, and motor control.
Overall, the BSC028N06LS3 G is designed for reliable, high-performance switching in various electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated up to 28A, making it suitable for high-load applications.
3. RDS(on) Specification: It boasts a low on-resistance (R_DS(on)) of approximately 6.5 mΩ at a V_GS of 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy driving in low-voltage applications.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Fast Switching: The device features fast switching capabilities, making it suitable for applications like DC-DC converters, power management, and motor control.
Overall, the BSC028N06LS3 G is designed for reliable, high-performance switching in various electronic applications.
Package
The BSC028N06LS3 G is packaged in a TO-220 format. This type of package is commonly used for power MOSFETs, offering good thermal performance and ease of mounting on heatsinks.
Pinout
The BSC028N06LS3 G is a N-channel MOSFET with a pin count of 3. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET operation. A voltage applied here turns the device on or off.
2. Drain (D): The output terminal where current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which current enters the MOSFET.
This MOSFET is designed for applications requiring efficient switching and is often used in power management and conversion circuits. It has low on-resistance and high-speed switching capabilities, making it suitable for various electronic applications.
1. Gate (G): Controls the MOSFET operation. A voltage applied here turns the device on or off.
2. Drain (D): The output terminal where current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which current enters the MOSFET.
This MOSFET is designed for applications requiring efficient switching and is often used in power management and conversion circuits. It has low on-resistance and high-speed switching capabilities, making it suitable for various electronic applications.
Manufacturer
The BSC028N06LS3 G is manufactured by Bosch, specifically under its semiconductor division. Bosch is a multinational engineering and technology company headquartered in Germany. Established in 1886, Bosch operates in various sectors, including automotive components, industrial technology, consumer goods, and energy and building technology. The company is known for its innovation and commitment to quality, particularly in automotive electronics, where it produces a range of products including power MOSFETs like the BSC028N06LS3 G, which are used for efficient power management in various applications.
Application
The BSC028N06LS3 G is a N-channel MOSFET primarily used in power management applications. Its application areas include switch-mode power supplies, DC-DC converters, motor drivers, and general-purpose switching circuits. It is suitable for high-efficiency designs in consumer electronics, industrial equipment, and automotive systems, where low conduction losses and fast switching capabilities are essential.
Equivalent
The BSC028N06LS3 G is a N-channel MOSFET. Equivalent products include the IRF3205, STP55NF06, and FDN360P. It's essential to check the specific parameters like voltage, current rating, and R_DS(on) to ensure compatibility with your application.
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