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BPW34S
SENSOR PHOTODIODE 850NM 2SMD GW
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| Wavelength | 850nm |
| SpectralRange | 400nm ~ 1100nm |
| DiodeType | PIN |
| ResponseTime | 20ns |
| Voltage-DCReverse(Vr)(Max) | 32 V |
| Current-Dark(Typ) | 2nA |
| ActiveArea | 7mm² |
| ViewingAngle | 120° |
| OperatingTemperature | -40°C ~ 100°C |
| MountingType | Surface Mount |
概述
Description
The BPW34S is a silicon photodiode designed for the detection of visible and near-infrared light. It features a spectral range of approximately 430 nm to 1100 nm and is often encapsulated in a clear plastic package. This device is valued for its high sensitivity and fast response time, making it suitable for applications in light measurement, optical communications, and sensor systems.
Key characteristics include a low dark current and a high shunt resistance, which contribute to its reliability and efficiency in various lighting conditions. The BPW34S is particularly noted for its small size, allowing it to be easily integrated into compact electronic devices. Additionally, it can operate over a wide temperature range, enhancing its versatility in different environments.
This photodiode is commonly used in conjunction with other electronic components to form part of larger systems for detecting light intensity, presence, or changes in lighting conditions. Its reliability and performance make it a popular choice among engineers and designers working on optical sensing and measurement projects.
Key characteristics include a low dark current and a high shunt resistance, which contribute to its reliability and efficiency in various lighting conditions. The BPW34S is particularly noted for its small size, allowing it to be easily integrated into compact electronic devices. Additionally, it can operate over a wide temperature range, enhancing its versatility in different environments.
This photodiode is commonly used in conjunction with other electronic components to form part of larger systems for detecting light intensity, presence, or changes in lighting conditions. Its reliability and performance make it a popular choice among engineers and designers working on optical sensing and measurement projects.
Features
The BPW34S is a silicon photodiode designed for visible and near-infrared light detection. Here are its key features:
1. Spectral Range: It has a spectral sensitivity range typically from about 430 nm to 1100 nm, making it suitable for various light sensing applications within this range.
2. Peak Sensitivity: The photodiode has a peak wavelength sensitivity around 900 nm.
3. Package: The device is housed in a small, side-looking surface-mount package, which is compact and suitable for space-constrained applications.
4. Response Time: The BPW34S offers fast response times, making it useful for high-speed applications.
5. Low Capacitance: It features low capacitance, beneficial for high-frequency applications.
6. Responsivity: It provides a typical responsivity of around 0.6 A/W at its peak wavelength.
7. Applications: Common applications include light detection tasks in industrial, consumer electronics, and automotive sectors.
8. Temperature Range: It generally operates over a wide temperature range, allowing for reliable performance in diverse environmental conditions.
These features make the BPW34S a versatile photodiode for various lighting and sensing applications.
1. Spectral Range: It has a spectral sensitivity range typically from about 430 nm to 1100 nm, making it suitable for various light sensing applications within this range.
2. Peak Sensitivity: The photodiode has a peak wavelength sensitivity around 900 nm.
3. Package: The device is housed in a small, side-looking surface-mount package, which is compact and suitable for space-constrained applications.
4. Response Time: The BPW34S offers fast response times, making it useful for high-speed applications.
5. Low Capacitance: It features low capacitance, beneficial for high-frequency applications.
6. Responsivity: It provides a typical responsivity of around 0.6 A/W at its peak wavelength.
7. Applications: Common applications include light detection tasks in industrial, consumer electronics, and automotive sectors.
8. Temperature Range: It generally operates over a wide temperature range, allowing for reliable performance in diverse environmental conditions.
These features make the BPW34S a versatile photodiode for various lighting and sensing applications.
Package
The BPW34S is a silicon photodiode housed in a surface-mount package. It is designed for detecting visible and near-infrared radiation. The package type is typically small and rectangular, suitable for integration onto printed circuit boards, enabling efficient, compact sensor designs.
Pinout
The BPW34S is a photodiode, specifically designed for applications involving light detection. It features two pins, which are used for its electrical connections. The primary function of the BPW34S is to convert light into an electrical current, which is then used in various electronic circuits for sensing and measurement purposes.
Pin 1 is the anode, and Pin 2 is the cathode. When light hits the photodiode, it generates a current proportional to the light intensity. This makes the BPW34S suitable for applications such as ambient light sensing, optical communication, and other devices requiring precise light measurement.
The BPW34S is known for its high sensitivity to visible and near-infrared light, making it versatile for a range of applications. Its compact size and effective performance make it a popular choice in many electronic designs.
Pin 1 is the anode, and Pin 2 is the cathode. When light hits the photodiode, it generates a current proportional to the light intensity. This makes the BPW34S suitable for applications such as ambient light sensing, optical communication, and other devices requiring precise light measurement.
The BPW34S is known for its high sensitivity to visible and near-infrared light, making it versatile for a range of applications. Its compact size and effective performance make it a popular choice in many electronic designs.
Manufacturer
The BPW34S is manufactured by Vishay Intertechnology, Inc. Vishay is a multinational corporation headquartered in Malvern, Pennsylvania, United States. The company is known for producing discrete semiconductors and passive electronic components. Vishay's product portfolio includes resistors, capacitors, inductors, diodes, optoelectronics, and various other semiconductor devices. The BPW34S, specifically, is a silicon photodiode used in a variety of applications, including light sensing and photovoltaic tasks. Vishay serves a broad range of industries such as automotive, industrial, consumer electronics, telecommunications, military, aerospace, and medical.
Application
The BPW34S is a photodiode sensor used in various applications including optical remote control systems, photometry, optical character recognition, and light barrier systems. It is also used in automotive light sensors, solar cell applications, and for detecting visible and near-infrared radiation in industrial and consumer electronics. Its compact size and sensitivity to a broad spectrum of light make it versatile for integration into different devices and systems requiring light detection.
Equivalent
The BPW34S is a photodiode commonly used for light detection applications. Equivalent products include the OSRAM SFH 203 P, Vishay's VBPW34S, and Everlight's PD204-6C. These components have similar specifications such as spectral sensitivity and package type, making them suitable alternatives for projects requiring the BPW34S. Always verify the specific requirements and datasheets to ensure compatibility in your application.
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