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BC847BDW1T1G
TRANS 2NPN 45V 0.1A SC88/SC70-6
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | 2 NPN (Dual) |
| Current-Collector(Ic)(Max) | 100mA |
| Voltage-CollectorEmitterBreakdown(Max) | 45V |
| VceSaturation(Max)@IbIc | 600mV @ 5mA, 100mA |
| Current-CollectorCutoff(Max) | 15nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 200 @ 2mA, 5V |
| Power-Max | 380mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
概述
Description
The BC847BDW1T1G is a general-purpose NPN bipolar junction transistor (BJT) designed for various electronic applications, including amplifiers and switching. It features a low current and voltage ratings, making it suitable for low-power circuits. The transistor operates with a maximum collector-emitter voltage (Vce) of 45V and a maximum collector current (Ic) of 100mA.
The BC847 series has a high current gain (hFE), typically ranging from 100 to 600, which allows for efficient signal amplification. Its compact SOT-23 package enables easy integration into printed circuit boards (PCBs).
Key attributes of the BC847BDW1T1G include:
- Configuration: NPN
- Package: SOT-23
- Vce(max): 45V
- Ic(max): 100mA
- hFE: 100 - 600
Due to its reliability and versatility, the BC847BDW1T1G is widely used in consumer electronics, automotive applications, and various industrial devices. Always refer to the datasheet for specific electrical characteristics and usage guidelines.
The BC847 series has a high current gain (hFE), typically ranging from 100 to 600, which allows for efficient signal amplification. Its compact SOT-23 package enables easy integration into printed circuit boards (PCBs).
Key attributes of the BC847BDW1T1G include:
- Configuration: NPN
- Package: SOT-23
- Vce(max): 45V
- Ic(max): 100mA
- hFE: 100 - 600
Due to its reliability and versatility, the BC847BDW1T1G is widely used in consumer electronics, automotive applications, and various industrial devices. Always refer to the datasheet for specific electrical characteristics and usage guidelines.
Features
The BC847BDW1T1G is a dual NPN transistor designed for general-purpose amplification and switching applications. Key features include:
1. Configuration: Dual NPN transistor in a single package.
2. Max Collector-Emitter Voltage (Vce): 45V, suitable for various applications.
3. Max Collector Current (Ic): 100mA, allowing for moderate load driving.
4. Gain (hFE): High current gain (typically in the range of 100 to 600), enhancing signal amplification.
5. Package Type: Available in a SOT-363 package, which is compact and facilitates space-efficient designs.
6. Operating Temperature Range: -55°C to +150°C, making it suitable for a wide range of environments.
7. Applications: Ideal for low-frequency amplification, switching circuits, and signal processing.
The BC847BDW1T1G is widely used in consumer electronics, automotive, and industrial applications due to its reliability and efficiency.
1. Configuration: Dual NPN transistor in a single package.
2. Max Collector-Emitter Voltage (Vce): 45V, suitable for various applications.
3. Max Collector Current (Ic): 100mA, allowing for moderate load driving.
4. Gain (hFE): High current gain (typically in the range of 100 to 600), enhancing signal amplification.
5. Package Type: Available in a SOT-363 package, which is compact and facilitates space-efficient designs.
6. Operating Temperature Range: -55°C to +150°C, making it suitable for a wide range of environments.
7. Applications: Ideal for low-frequency amplification, switching circuits, and signal processing.
The BC847BDW1T1G is widely used in consumer electronics, automotive, and industrial applications due to its reliability and efficiency.
Package
The BC847BDW1T1G is packaged in a SOT-23 surface mount package. This compact package is commonly used for transistors in electronic circuits, providing efficient space utilization and thermal performance.
Pinout
The BC847BDW1T1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package. It has a total of 3 pins. The pin configuration is as follows:
1. Pin 1 (Emitter, E): This is the emitter terminal of the transistor.
2. Pin 2 (Base, B): This is the base terminal, which controls the transistor’s operation.
3. Pin 3 (Collector, C): This is the collector terminal, where the output current flows.
The BC847 is commonly used for general-purpose switching and amplification applications in various electronic circuits.
1. Pin 1 (Emitter, E): This is the emitter terminal of the transistor.
2. Pin 2 (Base, B): This is the base terminal, which controls the transistor’s operation.
3. Pin 3 (Collector, C): This is the collector terminal, where the output current flows.
The BC847 is commonly used for general-purpose switching and amplification applications in various electronic circuits.
Manufacturer
The BC847BDW1T1G is manufactured by Vishay Intertechnology, Inc., a prominent global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for its diverse product offerings, which include resistors, capacitors, inductors, and various types of diodes and transistors, catering to a wide range of industries such as automotive, consumer electronics, telecommunications, and industrial applications. The company is headquartered in Malvern, Pennsylvania, and is recognized for its commitment to innovation and quality in the electronics market.
Application
The BC847BDW1T1G is a NPN bipolar junction transistor (BJT) commonly used in low-power amplification and switching applications. It is suitable for consumer electronics, audio devices, signal processing, and digital circuits. Its small package size makes it ideal for compact designs in mobile devices, automotive applications, and industrial controls.
Equivalent
The BC847BDW1T1G is a general-purpose NPN transistor. Equivalent products include the BC547, BC548, 2N3904, and 2N2222 transistors. Ensure the specifications such as voltage, current rating, and gain are compatible with your application when substituting.
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