BC807-25LT1G

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BC807-25LT1G

TRANS PNP 45V 0.5A SOT23-3

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規格

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 500 mA
Voltage-CollectorEmitterBreakdown(Max) 45 V
VceSaturation(Max)@IbIc 700mV @ 50mA, 500mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 160 @ 100mA, 1V
Power-Max 300 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

概述

Description

The BC807-25LT1G is a general-purpose NPN bipolar junction transistor (BJT) commonly used in low-power switching and amplification applications. It features a maximum collector current of 800 mA and a collector-emitter voltage rating of 45 V. The transistor is housed in a compact SOT-23 package, making it suitable for space-constrained designs.
Key specifications include a current gain (h_FE) of 100 to 600, which allows for effective signal amplification. The BC807-25LT1G is designed for low noise and high-speed operation, making it ideal for audio and RF applications. Its robust performance under various conditions makes it a popular choice in consumer electronics, automotive applications, and industrial equipment.
The device is also known for its thermal stability and reliability, with a maximum junction temperature of 150°C. Overall, the BC807-25LT1G is a versatile component for engineers looking for efficient and reliable transistor solutions in their designs.

Features

The BC807-25LT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power switching and amplification applications. Key features include:
1. Maximum Collector-Emitter Voltage (Vce): 45V, making it suitable for various electronic circuits.
2. Maximum Collector Current (Ic): 800 mA, allowing for moderate current handling.
3. Gain (hFE): It offers a current gain range of 100 to 600, enhancing its amplification capabilities.
4. Package Type: Available in a SOT-23 package, which is compact and suitable for surface-mount applications.
5. Low Saturation Voltage: Ensures efficient operation in switching applications.
6. Operating Temperature Range: Typically from -55°C to +150°C, allowing for use in diverse environments.
7. Fast Switching Speed: Ideal for applications in switching power supplies and signal processing.
These features make the BC807-25LT1G suitable for consumer electronics, automotive applications, and communication devices.

Package

The BC807-25LT1G is packaged in a SOT-23 type package. This surface mount package is commonly used for small signal transistors and provides a compact design suitable for various electronic applications.

Pinout

The BC807-25LT1G is a PNP bipolar junction transistor (BJT) housed in a SOT-23 package. It features a total of 3 pins.
The pin configuration is as follows:
1. Emitter (E) - The pin through which current exits the transistor.
2. Base (B) - The control pin that regulates the transistor's operation.
3. Collector (C) - The pin through which current enters the transistor.
The BC807-25LT1G is commonly used in general-purpose switching and amplification applications. It is designed for low-power applications with a maximum collector current of 800 mA and a voltage rating of 45 V. The device is characterized by its low saturation voltage and fast switching capabilities.

Manufacturer

The BC807-25LT1G is manufactured by ON Semiconductor, a global semiconductor company that provides a wide range of products and services, including analog, discrete, and power semiconductors. Founded in 1960, ON Semiconductor is known for its focus on energy-efficient solutions and is a major supplier to various industries such as automotive, communications, computing, consumer electronics, and industrial applications. The company is headquartered in Phoenix, Arizona, and emphasizes innovation and sustainability in its operations, aiming to support the growing demand for advanced technologies while minimizing environmental impact.

Application

The BC807-25LT1G is a complementary bipolar junction transistor (BJT) primarily used in low-power amplification and switching applications. It is suitable for audio amplifiers, signal processing, and general-purpose switching circuits in consumer electronics, automotive applications, and communication devices. Its compact size and efficiency make it ideal for use in portable and battery-operated devices.

Equivalent

The BC807-25LT1G is a PNP bipolar junction transistor (BJT) with a maximum collector current of 800 mA and a voltage rating of 45V. Equivalent products include the BC807, BC557, and 2N2907. Make sure to check specifications like current, voltage, and package type for compatibility in your application.

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