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BAW56-7-F
DIODE ARRAY GP 75V 300MA SOT23-3
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規格
| Part Status | Active |
| Diode Configuration | 1 Pair Common Anode |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Current - Average Rectified (Io) (per Diode) | 300mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Current - Reverse Leakage @ Vr | 2.5 µA @ 75 V |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Base Product Number | BAW56 |
概述
Description
BAW56-7-F is a general-purpose Schottky barrier diode designed for high-speed switching applications. It is notable for its low forward voltage drop, allowing efficient operation in power management circuits. The device can handle moderate current levels, making it suitable for use in power supplies, rectification, and signal processing.
Key features include a fast switching speed, which minimizes switching losses, and a high reverse voltage rating, providing reliability in various applications. The BAW56-7-F is typically used in consumer electronics, automotive applications, and industrial devices due to its compact package and efficiency.
When using the BAW56-7-F, it is essential to consider parameters such as maximum reverse voltage, forward current, and thermal characteristics to ensure optimal performance and longevity in a circuit. Overall, it is an effective choice for applications requiring rapid response and efficient power management.
Key features include a fast switching speed, which minimizes switching losses, and a high reverse voltage rating, providing reliability in various applications. The BAW56-7-F is typically used in consumer electronics, automotive applications, and industrial devices due to its compact package and efficiency.
When using the BAW56-7-F, it is essential to consider parameters such as maximum reverse voltage, forward current, and thermal characteristics to ensure optimal performance and longevity in a circuit. Overall, it is an effective choice for applications requiring rapid response and efficient power management.
Features
The BAW56-7-F is a general-purpose silicon switching diode characterized by its fast switching capabilities. It features a maximum reverse voltage (V_R) of 50V, a forward current (I_F) rating of 200mA, and a low forward voltage drop, typically around 0.6V at 10mA. This diode is designed for various applications, including signal processing, rectification, and clamping.
Key features include:
- Fast Switching Speed: Suitable for high-frequency applications.
- Low Reverse Leakage Current: Ensures minimal energy loss.
- Compact Package: Often available in a small SOD-123 package, making it ideal for space-constrained designs.
- Wide Operating Temperature Range: Typically from -55°C to +150°C, making it robust for diverse environmental conditions.
The BAW56-7-F is commonly used in telecommunications, consumer electronics, and automotive applications due to its reliability and efficiency.
Key features include:
- Fast Switching Speed: Suitable for high-frequency applications.
- Low Reverse Leakage Current: Ensures minimal energy loss.
- Compact Package: Often available in a small SOD-123 package, making it ideal for space-constrained designs.
- Wide Operating Temperature Range: Typically from -55°C to +150°C, making it robust for diverse environmental conditions.
The BAW56-7-F is commonly used in telecommunications, consumer electronics, and automotive applications due to its reliability and efficiency.
Package
The BAW56-7-F is packaged in a SOT-23 type package.
Pinout
The BAW56-7-F is a dual small-signal Schottky diode in a SOT-23 package. It has a pin count of 3. The functions of the pins are as follows:
1. Pin 1 (Anode 1): This is the anode terminal of the first Schottky diode.
2. Pin 2 (Common Cathode): This serves as the common cathode for both diodes in the package.
3. Pin 3 (Anode 2): This is the anode terminal of the second Schottky diode.
The BAW56-7-F is typically used for applications like clamping, rectification, and switching due to its low forward voltage drop and fast switching capabilities.
1. Pin 1 (Anode 1): This is the anode terminal of the first Schottky diode.
2. Pin 2 (Common Cathode): This serves as the common cathode for both diodes in the package.
3. Pin 3 (Anode 2): This is the anode terminal of the second Schottky diode.
The BAW56-7-F is typically used for applications like clamping, rectification, and switching due to its low forward voltage drop and fast switching capabilities.
Manufacturer
The BAW56-7-F is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the design and production of discrete, logic, and MOSFET components, primarily serving the automotive, industrial, and communication sectors. The company focuses on providing high-quality, reliable semiconductor solutions with a strong emphasis on efficiency and performance. Nexperia was formed as a spin-off from NXP Semiconductors in 2017 and has established itself as a key player in the electronics industry, offering a wide range of products that support various applications in modern technology.
Application
The BAW56-7-F is a small-signal Schottky diode used primarily in RF applications, low-voltage rectification, and switching. Its high-speed performance makes it suitable for RF mixers, detectors, and signal processing in communication devices. Additionally, it serves in power management circuits and general-purpose electronic applications where fast switching and low forward voltage drop are essential.
Equivalent
The BAW56-7-F is a Schottky diode. Equivalent products include the BAT54, BAT54A, and BAT54B diodes. Other alternatives may include the 1N5817, 1N5818, and 1N5819, depending on specific voltage and current requirements. Always verify specifications for compatibility in your application.
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