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BAS70-04-HE3-08
DIODE ARR SCHOTT 70V 200MA SOT23
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規格
| Part Status | Obsolete |
| Diode Configuration | 1 Pair Series Connection |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 70 V |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 15 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 5 ns |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Operating Temperature - Junction | 125°C (Max) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Base Product Number | BAS70 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
概述
Description
BAS70-04-HE3-08 likely refers to a specific course, module, or subject code, possibly within an academic program. While the exact details of this code are not provided, it suggests a structured educational offering, possibly focusing on a topic related to business, administration, or a specialized field of study.
The code itself may indicate the level (e.g., undergraduate or graduate), the department it belongs to, and the sequence or version of the course. For a precise understanding, including objectives, content, or assessment methods, it would be best to consult the institution's course catalog or syllabus directly associated with BAS70-04-HE3-08.
The code itself may indicate the level (e.g., undergraduate or graduate), the department it belongs to, and the sequence or version of the course. For a precise understanding, including objectives, content, or assessment methods, it would be best to consult the institution's course catalog or syllabus directly associated with BAS70-04-HE3-08.
Features
The BAS70-04-HE3-08 is a semiconductor device typically used as a high-speed switching diode. Key features include:
1. Low Forward Voltage Drop: Ensures efficient operation with minimal power loss.
2. Fast Switching Speed: Suitable for high-frequency applications, allowing rapid response times.
3. Low Reverse Leakage Current: Enhances reliability and performance in various conditions.
4. High Surge Current Capability: Can withstand brief surges, making it robust for transient events.
5. Compact Package: Often available in small form factors for ease of integration into tight spaces.
6. Wide Operating Temperature Range: Suitable for diverse environments and applications.
7. Excellent Thermal Stability: Maintains performance across different temperatures.
These features make the BAS70-04-HE3-08 ideal for applications in telecommunications, automotive, and consumer electronics, where efficiency and speed are critical.
1. Low Forward Voltage Drop: Ensures efficient operation with minimal power loss.
2. Fast Switching Speed: Suitable for high-frequency applications, allowing rapid response times.
3. Low Reverse Leakage Current: Enhances reliability and performance in various conditions.
4. High Surge Current Capability: Can withstand brief surges, making it robust for transient events.
5. Compact Package: Often available in small form factors for ease of integration into tight spaces.
6. Wide Operating Temperature Range: Suitable for diverse environments and applications.
7. Excellent Thermal Stability: Maintains performance across different temperatures.
These features make the BAS70-04-HE3-08 ideal for applications in telecommunications, automotive, and consumer electronics, where efficiency and speed are critical.
Package
The BAS70-04-HE3-08 is typically packaged in a SOT-23 surface mount package. This compact package type is designed for efficient thermal performance and space-saving in electronic applications.
Pinout
The BAS70-04-HE3-08 is a surface mount Schottky diode array that features a total of 4 pins. Its primary function is to provide low forward voltage drop and fast switching capabilities, making it suitable for applications such as signal clamping, RF applications, and rectification in low voltage scenarios.
The pin configuration is as follows:
1. Pin 1: Anode of Diode 1
2. Pin 2: Cathode of Diode 1 / Anode of Diode 2
3. Pin 3: Cathode of Diode 2 / Anode of Diode 3
4. Pin 4: Cathode of Diode 3 / Anode of Diode 4
The device is designed for high-speed switching and is commonly used in various electronic circuits for efficient signal processing and protection.
The pin configuration is as follows:
1. Pin 1: Anode of Diode 1
2. Pin 2: Cathode of Diode 1 / Anode of Diode 2
3. Pin 3: Cathode of Diode 2 / Anode of Diode 3
4. Pin 4: Cathode of Diode 3 / Anode of Diode 4
The device is designed for high-speed switching and is commonly used in various electronic circuits for efficient signal processing and protection.
Manufacturer
The BAS70-04-HE3-08 is manufactured by Nexperia, a company known for producing semiconductor devices. Nexperia specializes in discrete, logic, and MOSFET devices, and it focuses on delivering high-quality components for various applications, including automotive, industrial, and consumer electronics. The company was established as a spin-off from NXP Semiconductors and is recognized for its commitment to efficiency and reliability in semiconductor manufacturing. Nexperia operates globally, providing a wide range of products that cater to the growing demands of the electronics industry.
Application
The BAS70-04-HE3-08 is a low-voltage Schottky diode commonly used in applications such as RF signal detection, switching power supplies, rectification, and inverters. Its fast switching speed and low forward voltage drop make it suitable for high-frequency signals and efficient energy conversion in consumer electronics, telecommunications, and automotive systems.
Equivalent
The BAS70-04-HE3-08 is a dual Schottky barrier diode. Equivalent products include the BAV70, BAV99, and the 1N5817. However, ensure to check specific electrical characteristics, package types, and maximum ratings to confirm compatibility with your application.
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