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AT25EU0011A-MAHN-T
IC FLASH 1MB SPI 85 MHZ 8UDFN
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Mbit |
| Memory Organization | 128K x 8 |
| Memory Interface | SPI - Quad I/O, QPI |
| Write Cycle Time - Word, Page | 8ms |
| Voltage - Supply | 1.65V ~ 3.6V |
| Mounting Type | Surface Mount |
| Package / Case | 8-UFDFN Exposed Pad |
| Supplier Device Package | 8-UDFN (2x3) |
| Base Product Number | AT25EU0011A |
| Clock Frequency | 85 MHz |
概述
Description
The AT25EU0011A-MAHN-T is a high-performance serial EEPROM (Electrically Erasable Programmable Read-Only Memory) designed for a range of electronic applications. It features a storage capacity of 1 Mb (megabit) and operates using the SPI (Serial Peripheral Interface) protocol, which ensures efficient data transfer. This EEPROM is known for its low power consumption, making it suitable for battery-powered devices. It supports operating voltages from 1.7V to 3.6V, enhancing its versatility across different systems.
One of the key features of the AT25EU0011A-MAHN-T is its endurance and data retention capabilities, with 1 million write cycles per cell and data retention of up to 100 years. The device is packaged in a compact DFN (Dual Flat No-Lead) form factor, which is space-saving and suitable for modern miniaturized electronics. Additionally, it includes sophisticated security measures, such as block protection and write protection, to prevent unauthorized data manipulation.
Overall, the AT25EU0011A-MAHN-T is an ideal choice for applications requiring reliable non-volatile memory with efficient power usage, such as in automotive, industrial, and consumer electronics.
One of the key features of the AT25EU0011A-MAHN-T is its endurance and data retention capabilities, with 1 million write cycles per cell and data retention of up to 100 years. The device is packaged in a compact DFN (Dual Flat No-Lead) form factor, which is space-saving and suitable for modern miniaturized electronics. Additionally, it includes sophisticated security measures, such as block protection and write protection, to prevent unauthorized data manipulation.
Overall, the AT25EU0011A-MAHN-T is an ideal choice for applications requiring reliable non-volatile memory with efficient power usage, such as in automotive, industrial, and consumer electronics.
Features
The AT25EU0011A-MAHN-T is a serial EEPROM memory device produced by Microchip Technology. Key features include:
1. Capacity: 1 Mbit (128 Kbytes) of memory, organized as 131,072 bytes.
2. Interface: Utilizes a Serial Peripheral Interface (SPI) for communication, supporting modes 0 and 3.
3. Voltage Range: Operates over a wide voltage range of 1.7V to 3.6V, making it suitable for battery-operated devices.
4. Performance: Features a fast clock frequency up to 20 MHz for efficient data transfer.
5. Low Power Consumption: Offers low standby and active power consumption, optimizing battery life.
6. Data Retention and Endurance: Provides reliable data retention for up to 100 years and endurance of 1 million write cycles per byte.
7. Security: Includes block write protection and software write protection to enhance data security.
8. Package: Comes in a compact 8-lead UDFN (2x3 mm) package, ideal for space-constrained applications.
These features make the AT25EU0011A-MAHN-T suitable for applications requiring reliable and efficient non-volatile memory storage, such as consumer electronics, industrial equipment, and automotive systems.
1. Capacity: 1 Mbit (128 Kbytes) of memory, organized as 131,072 bytes.
2. Interface: Utilizes a Serial Peripheral Interface (SPI) for communication, supporting modes 0 and 3.
3. Voltage Range: Operates over a wide voltage range of 1.7V to 3.6V, making it suitable for battery-operated devices.
4. Performance: Features a fast clock frequency up to 20 MHz for efficient data transfer.
5. Low Power Consumption: Offers low standby and active power consumption, optimizing battery life.
6. Data Retention and Endurance: Provides reliable data retention for up to 100 years and endurance of 1 million write cycles per byte.
7. Security: Includes block write protection and software write protection to enhance data security.
8. Package: Comes in a compact 8-lead UDFN (2x3 mm) package, ideal for space-constrained applications.
These features make the AT25EU0011A-MAHN-T suitable for applications requiring reliable and efficient non-volatile memory storage, such as consumer electronics, industrial equipment, and automotive systems.
Package
The AT25EU0011A-MAHN-T is packaged in an 8-lead SOIC (Small Outline Integrated Circuit) form.
Pinout
The AT25EU0011A-MAHN-T is a serial EEPROM memory device from Microchip Technology. It features an 8-pin configuration, typically found in a small outline package. Here is a concise overview of its pin functions:
1. CS (Chip Select): Activates the device for communication.
2. SO (Serial Output): Outputs data from the EEPROM.
3. WP (Write Protect): Protects against unintended writes to the memory.
4. GND (Ground): Provides the reference voltage level for device operation.
5. SI (Serial Input): Receives data to be written to the EEPROM.
6. SCK (Serial Clock): Synchronizes the communication between the microcontroller and the EEPROM.
7. HOLD: Pauses the serial communication without resetting the serial sequence.
8. VCC: Supplies the power to the device.
This EEPROM is commonly used for data storage applications requiring non-volatile memory, with low power consumption and a serial interface for ease of use.
1. CS (Chip Select): Activates the device for communication.
2. SO (Serial Output): Outputs data from the EEPROM.
3. WP (Write Protect): Protects against unintended writes to the memory.
4. GND (Ground): Provides the reference voltage level for device operation.
5. SI (Serial Input): Receives data to be written to the EEPROM.
6. SCK (Serial Clock): Synchronizes the communication between the microcontroller and the EEPROM.
7. HOLD: Pauses the serial communication without resetting the serial sequence.
8. VCC: Supplies the power to the device.
This EEPROM is commonly used for data storage applications requiring non-volatile memory, with low power consumption and a serial interface for ease of use.
Manufacturer
The manufacturer of the AT25EU0011A-MAHN-T is Dialog Semiconductor, which is a part of Renesas Electronics. Dialog Semiconductor is known for producing semiconductors and integrated circuits, focusing on power management, audio, and wireless technologies. They cater to various markets, including consumer electronics, automotive, computing, and industrial applications. As part of Renesas, a leading global supplier of microcontrollers and advanced semiconductor solutions, Dialog Semiconductor contributes to the development of innovative solutions for a connected world.
Application
The AT25EU0011A-MAHN-T is a 1-Mbit serial EEPROM designed for use in applications requiring reliable and energy-efficient non-volatile memory storage. Key application areas include consumer electronics, industrial automation, automotive systems, and IoT devices. It is suitable for data logging, configuration storage, and firmware updates in devices where low power consumption and high data integrity are crucial.
Equivalent
The AT25EU0011A-MAHN-T is a 1-Mbit serial EEPROM from Microchip Technology. Equivalent products would include other 1-Mbit serial EEPROMs with similar specifications from different manufacturers. Notable alternatives might include:
1. STMicroelectronics: M95M01 series.
2. ON Semiconductor: CAT24M01 series.
3. Winbond: W25X10 series.
4. Adesto Technologies: AT25M01 series.
Always ensure compatibility by checking the datasheets for specific features like package type, voltage range, and communication protocols.
1. STMicroelectronics: M95M01 series.
2. ON Semiconductor: CAT24M01 series.
3. Winbond: W25X10 series.
4. Adesto Technologies: AT25M01 series.
Always ensure compatibility by checking the datasheets for specific features like package type, voltage range, and communication protocols.
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