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AS4C8M16SA-6TIN
IC DRAM 128MBIT PAR 54TSOP II
- 製造商
- 製造商。 部分 #AS4C8M16SA-6TIN
- 包 54-TSOP (0.400, 10.16mm Width)
- 資料表
- 有現貨的3945
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規格
| Supplier | Alliance Memory, Inc. |
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM |
| MemorySize | 128Mb (8M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 166 MHz |
| WriteCycleTime-WordPage | 12ns |
| AccessTime | 5 ns |
| Voltage-Supply | 3V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 54-TSOP (0.400, 10.16mm Width) |
概述
Description
AS4C8M16SA-6TIN is a static RAM (SRAM) device from Alliance Memory, part of the AS4C family.
- Type/org: 128 Mbit total capacity, organized 8,388,608 words × 16 bits (8M × 16).
- Speed: -6 indicates a 6 ns access time (high-speed SRAM).
- Interface: Asynchronous SRAM with standard control pins (chip enable, output enable, write enable) and tri-state outputs.
- Packaging: SA/6TIN suffixes denote variant packaging and tin-lead finish options; refer to the datasheet for exact package type and lead finish.
- Electricals: Typical operation around 3.3V (exact voltage range and margins to be confirmed in the datasheet).
- Applications: Suitable for caches, buffers, frame buffers, graphics memories, and other high-speed memory buffers requiring random access.
- Why use: No refresh is needed, simple address/data interface, reliable fast random access.
For exact pinout, voltage range, power consumption, and packaging details, consult the official AS4C8M16SA-6TIN datasheet.
- Type/org: 128 Mbit total capacity, organized 8,388,608 words × 16 bits (8M × 16).
- Speed: -6 indicates a 6 ns access time (high-speed SRAM).
- Interface: Asynchronous SRAM with standard control pins (chip enable, output enable, write enable) and tri-state outputs.
- Packaging: SA/6TIN suffixes denote variant packaging and tin-lead finish options; refer to the datasheet for exact package type and lead finish.
- Electricals: Typical operation around 3.3V (exact voltage range and margins to be confirmed in the datasheet).
- Applications: Suitable for caches, buffers, frame buffers, graphics memories, and other high-speed memory buffers requiring random access.
- Why use: No refresh is needed, simple address/data interface, reliable fast random access.
For exact pinout, voltage range, power consumption, and packaging details, consult the official AS4C8M16SA-6TIN datasheet.
Package
TSOP (Thin Small Outline Package) – specifically a TSOP-II style, 48‑pin package for the AS4C8M16SA-6TIN.
Manufacturer
- Manufacturer: Alliance Memory.
- What kind of company: A semiconductor memory company that designs and manufactures SRAM and DRAM products for embedded, automotive, and consumer electronics applications.
- What kind of company: A semiconductor memory company that designs and manufactures SRAM and DRAM products for embedded, automotive, and consumer electronics applications.
Application
AS4C8M16SA-6TIN is a high-speed 8M×16-bit synchronous DRAM (6ns) in a compact package. Common application areas include:
- Embedded and portable electronics (SoCs, microcontrollers, DSPs)
- Consumer electronics (digital cameras, camcorders, set-top boxes, media players)
- Networking/storage devices (routers, modems, NAS, video buffers)
- Automotive/industrial systems (infotainment, instrument clusters, industrial controllers)
- Embedded and portable electronics (SoCs, microcontrollers, DSPs)
- Consumer electronics (digital cameras, camcorders, set-top boxes, media players)
- Networking/storage devices (routers, modems, NAS, video buffers)
- Automotive/industrial systems (infotainment, instrument clusters, industrial controllers)
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