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AS4C64M8D2-25BIN
IC DRAM 512MBIT PARALLEL 60FBGA
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-FBGA (8x10) |
| Base Product Number | AS4C64 |
| Clock Frequency | 400 MHz |
| Access Time | 400 ps |
概述
Description
The AS4C64M8D2-25BIN is a 64Mb (megabit) DRAM chip designed for high-performance applications, typically used in mobile devices, tablets, and other consumer electronics. It features a 4-bit wide data bus and operates at a clock speed of 25 MHz. This DDR (Double Data Rate) SDRAM component offers improved data transfer rates and efficiency compared to its predecessors by allowing data to be transferred on both the rising and falling edges of the clock cycle.
Key features include low power consumption, making it suitable for battery-operated devices, and support for various interface standards. Its compact size and high density also enable manufacturers to design smaller, more efficient devices without sacrificing performance. The AS4C64M8D2-25BIN is typically packaged in a standard SOJ (Small Outline J-lead) format, allowing for easy integration into electronic circuits. Overall, it serves as a reliable memory solution for various applications requiring efficient data handling and storage.
Key features include low power consumption, making it suitable for battery-operated devices, and support for various interface standards. Its compact size and high density also enable manufacturers to design smaller, more efficient devices without sacrificing performance. The AS4C64M8D2-25BIN is typically packaged in a standard SOJ (Small Outline J-lead) format, allowing for easy integration into electronic circuits. Overall, it serves as a reliable memory solution for various applications requiring efficient data handling and storage.
Features
The AS4C64M8D2-25BIN is a 512 Megabit (64 Megabytes) asynchronous DRAM (Dynamic Random Access Memory) chip. Key features include:
1. Architecture: It consists of 8 bits per chip and is organized as 4 banks of 16M x 8.
2. Speed: Operates at a clock speed of 25 ns, suitable for various applications requiring moderate-speed memory.
3. Voltage: Typically operates at a supply voltage of 3.3V, making it compatible with low-power systems.
4. Interface: Features asynchronous access, allowing for easier integration in designs without needing a clock signal.
5. Applications: Ideal for consumer electronics, networking applications, and industrial systems where cost-effective memory solutions are needed.
6. Package: Available in a standard 54-pin TSOP-II package, facilitating easy mounting on PCBs.
Overall, the AS4C64M8D2-25BIN provides a reliable and efficient memory solution for various electronic applications.
1. Architecture: It consists of 8 bits per chip and is organized as 4 banks of 16M x 8.
2. Speed: Operates at a clock speed of 25 ns, suitable for various applications requiring moderate-speed memory.
3. Voltage: Typically operates at a supply voltage of 3.3V, making it compatible with low-power systems.
4. Interface: Features asynchronous access, allowing for easier integration in designs without needing a clock signal.
5. Applications: Ideal for consumer electronics, networking applications, and industrial systems where cost-effective memory solutions are needed.
6. Package: Available in a standard 54-pin TSOP-II package, facilitating easy mounting on PCBs.
Overall, the AS4C64M8D2-25BIN provides a reliable and efficient memory solution for various electronic applications.
Package
The AS4C64M8D2-25BIN is typically packaged in a standard 54-ball FBGA (Fine Ball Grid Array) format, which is suitable for high-density memory applications.
Pinout
The AS4C64M8D2-25BIN is a 64Mb (8M x 8) DDR3 SDRAM memory chip with a total of 54 pins. Its primary function is to serve as a high-speed memory solution for various applications, including computing and consumer electronics.
Key pin functions include:
- Data Bus (DQ0-DQ7): 8-bit data input/output lines.
- Address Bus (A0-A12): Used to select memory locations.
- Control Pins:
- CS (Chip Select): Activates the chip.
- RAS (Row Address Strobe): Activates row access.
- CAS (Column Address Strobe): Activates column access.
- WE (Write Enable): Controls write operations.
- Clock Pin (CK): Provides the timing for synchronous operations.
- Power and Ground Pins (VDD, VSS): Supply power and ground connections.
This configuration enables efficient data storage and retrieval, making it suitable for high-performance applications.
Key pin functions include:
- Data Bus (DQ0-DQ7): 8-bit data input/output lines.
- Address Bus (A0-A12): Used to select memory locations.
- Control Pins:
- CS (Chip Select): Activates the chip.
- RAS (Row Address Strobe): Activates row access.
- CAS (Column Address Strobe): Activates column access.
- WE (Write Enable): Controls write operations.
- Clock Pin (CK): Provides the timing for synchronous operations.
- Power and Ground Pins (VDD, VSS): Supply power and ground connections.
This configuration enables efficient data storage and retrieval, making it suitable for high-performance applications.
Manufacturer
The AS4C64M8D2-25BIN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor is a company that specializes in designing and producing a variety of semiconductor products, including memory solutions, microcontrollers, and mixed-signal products. The company focuses on providing innovative solutions for applications in consumer electronics, automotive, industrial, and telecommunications sectors. Founded in the 1990s, Alliance Semiconductor serves a global market, emphasizing high-performance and cost-effective semiconductor technologies.
Application
The AS4C64M8D2-25BIN is a 512Mb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, telecommunications, networking devices, and computer systems. It is ideal for mobile devices, laptops, tablets, and embedded systems where high-speed data processing and efficient power consumption are essential. Additionally, it can be utilized in gaming consoles and industrial applications requiring reliable memory solutions.
Equivalent
The AS4C64M8D2-25BIN chip is a 64Mb (8M x 8) DDR2 SDRAM memory chip. Equivalent products can include:
1. MT8HTF12864AY-667
2. K4T1G164QF-HC6
3. Hynix H57V641620HFP-7
4. Nanya NT5CB128M8DT-37
5. Samsung K4T1G164QF-GC8
Always verify specifications such as speed, voltage, and timing before substitution.
1. MT8HTF12864AY-667
2. K4T1G164QF-HC6
3. Hynix H57V641620HFP-7
4. Nanya NT5CB128M8DT-37
5. Samsung K4T1G164QF-GC8
Always verify specifications such as speed, voltage, and timing before substitution.
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