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AS4C64M16D3B-12BCN
IC DRAM 1GBIT PARALLEL 96FBGA
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規格
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR3 |
| MemorySize | 1Gb (64M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 800 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 20 ns |
| Voltage-Supply | 1.425V ~ 1.575V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 96-TFBGA |
概述
Description
The AS4C64M16D3B-12BCN is a 1 Gigabit (Gb) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip manufactured by Alliance Semiconductor. It features a 64 Meg x 16 configuration, allowing for efficient data handling and storage. Designed for high-performance applications, it operates at a 1.5V supply voltage and supports data rates of up to 1600 MT/s (Megatransfers per second).
This memory chip is commonly used in various electronic devices, including computers, graphics cards, and other consumer electronics, due to its low power consumption and high-speed performance. The "12B" in its designation indicates a 12-nanometer fabrication process, enhancing its efficiency, while "CN" signifies the specific packaging and temperature range.
Overall, the AS4C64M16D3B-12BCN is suitable for applications requiring reliable and fast memory solutions, making it a viable choice for modern computing demands.
This memory chip is commonly used in various electronic devices, including computers, graphics cards, and other consumer electronics, due to its low power consumption and high-speed performance. The "12B" in its designation indicates a 12-nanometer fabrication process, enhancing its efficiency, while "CN" signifies the specific packaging and temperature range.
Overall, the AS4C64M16D3B-12BCN is suitable for applications requiring reliable and fast memory solutions, making it a viable choice for modern computing demands.
Features
The AS4C64M16D3B-12BCN is a DDR3 SDRAM memory chip with the following key features:
1. Organization: It is organized as 64M x 16 bits, providing a total capacity of 1GB.
2. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
3. Voltage: Designed to operate at a supply voltage of 1.5V, with a permissible range of 1.425V to 1.575V.
4. Package: Available in a compact 78-ball FBGA (Fine Ball Grid Array) package.
5. Latency: Supports CAS latency (CL) options, typically CL11 or CL13.
6. Features: Includes features like burst mode, deep power-down mode, and self-refresh.
7. Compatibility: It is compatible with DDR3 architecture, making it suitable for various applications, including consumer electronics, computing, and networking.
The AS4C64M16D3B-12BCN is designed for high-performance applications requiring reliable and efficient memory solutions.
1. Organization: It is organized as 64M x 16 bits, providing a total capacity of 1GB.
2. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second).
3. Voltage: Designed to operate at a supply voltage of 1.5V, with a permissible range of 1.425V to 1.575V.
4. Package: Available in a compact 78-ball FBGA (Fine Ball Grid Array) package.
5. Latency: Supports CAS latency (CL) options, typically CL11 or CL13.
6. Features: Includes features like burst mode, deep power-down mode, and self-refresh.
7. Compatibility: It is compatible with DDR3 architecture, making it suitable for various applications, including consumer electronics, computing, and networking.
The AS4C64M16D3B-12BCN is designed for high-performance applications requiring reliable and efficient memory solutions.
Package
The AS4C64M16D3B-12BCN is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for compactness and efficient thermal performance, suitable for memory applications.
Pinout
The AS4C64M16D3B-12BCN is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip with a pin count of 78. This memory device has a density of 1 Gb (Gigabit) and is organized as 64M x 16 bits.
Key functions of the pin assignments include:
- Data Pins (DQ0-DQ15): These are the data input/output pins for read/write operations.
- Address Pins (A0-A12): Used to select the memory addresses for the operations.
- Control Pins (CS, RAS, CAS, WE): Control signals for memory operations, enabling chip select, row address strobe, column address strobe, and write enable.
- Clock Pins (CK, CK#): These pins provide the clock signal to synchronize the operations of the memory.
- Power and Ground Pins (VDD, VSS): Power supply and ground connections.
Overall, the AS4C64M16D3B-12BCN is designed for high-performance memory applications in computing systems.
Key functions of the pin assignments include:
- Data Pins (DQ0-DQ15): These are the data input/output pins for read/write operations.
- Address Pins (A0-A12): Used to select the memory addresses for the operations.
- Control Pins (CS, RAS, CAS, WE): Control signals for memory operations, enabling chip select, row address strobe, column address strobe, and write enable.
- Clock Pins (CK, CK#): These pins provide the clock signal to synchronize the operations of the memory.
- Power and Ground Pins (VDD, VSS): Power supply and ground connections.
Overall, the AS4C64M16D3B-12BCN is designed for high-performance memory applications in computing systems.
Manufacturer
The manufacturer of the AS4C64M16D3B-12BCN is Alliance Memory Inc. Alliance Memory is a semiconductor company that specializes in providing memory solutions, including DRAM, SRAM, and Flash memory products. The company focuses on sourcing and supplying high-quality memory components for a variety of applications, such as consumer electronics, industrial equipment, telecommunications, and automotive systems. Their products are designed to be compatible with existing systems and often serve as drop-in replacements for legacy memory components from other manufacturers.
Application
The AS4C64M16D3B-12BCN is a DRAM memory chip used in various applications, including consumer electronics, smartphones, tablets, laptops, and gaming consoles. It is suitable for use in high-performance computing, networking devices, and automotive electronics, providing efficient data storage and retrieval for applications requiring fast memory access and reliability.
Equivalent
The AS4C64M16D3B-12BCN is a 64M x 16-bit DDR3 SDRAM memory chip. Equivalent products include:
1. MT41J128M16HA-125:E
2. H5TQ1G83AFR
3. K4B4G1646D-BCK0
Always verify compatibility with your specific application requirements.
1. MT41J128M16HA-125:E
2. H5TQ1G83AFR
3. K4B4G1646D-BCK0
Always verify compatibility with your specific application requirements.
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