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AS4C64M16D2A-25BIN

Name: AS4C64M16D2A-25BIN
Rating: 4.7 (12 reviews)

IC DRAM 1GBIT PARALLEL 84FBGA

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製造商。部分 #AS4C64M16D2A-25BIN
包 84-TFBGA
資料表 AS4C64M16D2A-25BIN DataSheet
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規格

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR2
MemorySize	1Gb (64M x 16)
MemoryInterface	Parallel
ClockFrequency	400 MHz
WriteCycleTime-WordPage	15ns
AccessTime	400 ps
Voltage-Supply	1.7V ~ 1.9V
OperatingTemperature	-40°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	84-TFBGA

概述

Description

The AS4C64M16D2A-25BIN is a high-performance, low-power DRAM (Dynamic Random Access Memory) module produced by Alliance Memory. It features a 64M x 16-bit configuration, offering a total memory capacity of 1GB. Operating with a voltage of 2.5V, it is designed for compatibility with various applications, including consumer electronics, telecommunications, and computing devices.
This DRAM operates at a clock speed of 200 MHz, providing fast data access and efficient performance. It utilizes a double data rate (DDR) interface to enhance throughput while maintaining lower power consumption compared to traditional DRAM solutions. The AS4C64M16D2A-25BIN is available in a compact, industry-standard TSOP II package, making it suitable for space-constrained applications.
Overall, this memory chip is an ideal choice for designers seeking reliable and efficient memory solutions in their electronic systems.

Features

The AS4C64M16D2A-25BIN is a 1Gb (gigabit) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip, organized as 64M x 16 bits. Key features include:
1. Technology: DDR3, providing improved speed and efficiency over previous DDR generations.
2. Data Rate: Operates at data rates up to 1600 MT/s (mega-transfers per second).
3. Voltage: Operates at a low voltage of 1.5V, with a potential for low-power modes.
4. Package: Available in a compact 78-ball TFBGA package.
5. Burst Length: Supports burst lengths of 4 and 8.
6. Latency: Offers low latency for faster operational speed.
7. Density: 1Gb density suitable for various applications, including consumer electronics, networking, and industrial systems.
8. Interface: Compliant with the DDR3 SDRAM standard, ensuring compatibility with various controllers and systems.
These features make the AS4C64M16D2A-25BIN a suitable choice for high-performance memory applications.

Package

The AS4C64M16D2A-25BIN is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format.

Pinout

The AS4C64M16D2A-25BIN is a 1 Gigabit (64M x 16) DDR3 SDRAM memory chip with a pin count of 78. It is organized in a double data rate (DDR) configuration and operates at a speed of 800 Mbps with a 25 ns access time.
The primary functions of the pins include data input/output, address input, control signals, and power supply connections. Key pins include:
- DQ (Data Input/Output): 16 pins for data transfer.
- A (Address): 13 pins for addressing memory locations.
- BA (Bank Address): 2 pins for selecting the bank.
- CS (Chip Select): Determines if the chip is selected for operation.
- WE (Write Enable) and RAS/CAS (Row/Column Address Strobe): Control signals for read/write operations.
- CK/CKE (Clock/Clock Enable): For timing control of the memory operations.
- VDD/VSS: Power supply and ground connections.
This chip is typically used in consumer electronics, computing devices, and embedded systems.

Manufacturer

The AS4C64M16D2A-25BIN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor is a company that specializes in designing and manufacturing advanced semiconductor solutions, particularly in memory products such as DRAM and SRAM. Founded in 1987, the company focuses on providing high-performance memory and storage solutions for various applications, including consumer electronics, telecommunications, and industrial systems. Alliance Semiconductor operates as a global player in the semiconductor industry, catering to diverse markets with innovative technology and product offerings.

Application

The AS4C64M16D2A-25BIN is a 64Mb DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, mobile devices, graphics cards, and networking equipment. Its features make it suitable for high-performance computing tasks, including data storage, buffering, and caching in devices like tablets, smartphones, and industrial machinery.

Equivalent

The AS4C64M16D2A-25BIN is a 1Gb (64M x 16) DDR3 SDRAM chip. Equivalent products include:
1. MT41J128M16HA-125:E
2. H5TQ2G63AFR-PBA
3. K4B4G1646Q-HYK0
4. IS43DR16720D-25BLI
Ensure to verify specifications such as speed, voltage, and package type before substitution.