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AS4C512M16D3LB-12BCN
IC DRAM 8GBIT PARALLEL 96FBGA
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- 製造商。 部分 #AS4C512M16D3LB-12BCN
- 包 96-TFBGA
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規格
| Supplier | Alliance Memory, Inc. |
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR3L |
| MemorySize | 8Gb (512M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 800 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 20 ns |
| Voltage-Supply | 1.283V ~ 1.45V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 96-TFBGA |
概述
Description
AS4C512M16D3LB-12BCN is a DDR3L SDRAM device from Alliance Memory. Key points:
- Type and density: DDR3L SDRAM, 512M x 16 organization, total capacity ≈ 8 Gbit (about 1 GB per device) with a 16-bit data width.
- Voltage: DDR3L (low voltage), typically around 1.35 V core operation (1.5 V I/O variants possible in some configs).
- Speed: Supports standard DDR3 speeds (commonly DDR3-1066/1333 in this family; check datasheet for exact grades).
- Architecture: Synchronous, 8 banks, burst length 8, with automatic refresh.
- Package/marking: The -12BCN suffix encodes speed grade, temperature range, packaging, and lead-free (BCN) options.
- Use cases: Building blocks for higher-density memory modules and embedded systems; multiple devices can be combined to form larger DIMMs or buffers depending on the design.
- Note: For precise timing (CL, tRCD, tRP), voltage tolerances, temperature range, and package details, consult the official Alliance Memory datasheet and the supplier’s specifications.
- Type and density: DDR3L SDRAM, 512M x 16 organization, total capacity ≈ 8 Gbit (about 1 GB per device) with a 16-bit data width.
- Voltage: DDR3L (low voltage), typically around 1.35 V core operation (1.5 V I/O variants possible in some configs).
- Speed: Supports standard DDR3 speeds (commonly DDR3-1066/1333 in this family; check datasheet for exact grades).
- Architecture: Synchronous, 8 banks, burst length 8, with automatic refresh.
- Package/marking: The -12BCN suffix encodes speed grade, temperature range, packaging, and lead-free (BCN) options.
- Use cases: Building blocks for higher-density memory modules and embedded systems; multiple devices can be combined to form larger DIMMs or buffers depending on the design.
- Note: For precise timing (CL, tRCD, tRP), voltage tolerances, temperature range, and package details, consult the official Alliance Memory datasheet and the supplier’s specifications.
Features
AS4C512M16D3LB-12BCN is Alliance Memory’s DDR3 SDRAM device. Key features (typical, check datasheet for exact numbers by speed grade):
- Density/organization: 512 Mb total, 16-bit wide (512M x 16)
- Interface: DDR3 SDRAM, synchronous with an 8-bank architecture
- Internal: 8n prefetch, Burst Length 8
- Refresh: Auto-refresh and self-refresh modes
- Latency: Programmable CAS latency (speed grade dependent)
- Voltage: nominally 1.5V (DDR3); part variants may be 1.35–1.5V family (confirm exact voltage for -12BCN)
- Packaging/Grade: RoHS/lead-free variant (-BCN); operating temperature grade varies by part (commercial/industrial; verify in datasheet)
Note: Exact speed (MT/s), voltage, and packaging depend on the specific speed grade and lot. Refer to the datasheet for the precise specifications of your device.
- Density/organization: 512 Mb total, 16-bit wide (512M x 16)
- Interface: DDR3 SDRAM, synchronous with an 8-bank architecture
- Internal: 8n prefetch, Burst Length 8
- Refresh: Auto-refresh and self-refresh modes
- Latency: Programmable CAS latency (speed grade dependent)
- Voltage: nominally 1.5V (DDR3); part variants may be 1.35–1.5V family (confirm exact voltage for -12BCN)
- Packaging/Grade: RoHS/lead-free variant (-BCN); operating temperature grade varies by part (commercial/industrial; verify in datasheet)
Note: Exact speed (MT/s), voltage, and packaging depend on the specific speed grade and lot. Refer to the datasheet for the precise specifications of your device.
Package
FBGA package (96-ball, lead-free).
Pinout
- Pin count: 84 pins (84-ball BGA)
- Function: 512 Mbit DDR3L SDRAM memory with x16 data width (16-bit bus), low-voltage operation (DDR3L).
- Function: 512 Mbit DDR3L SDRAM memory with x16 data width (16-bit bus), low-voltage operation (DDR3L).
Manufacturer
- Manufacturer: Alliance Memory, Inc.
- What kind of company: A semiconductor company that designs and markets memory ICs (DRAM/SRAM); a fabless memory designer/manufacturer.
- What kind of company: A semiconductor company that designs and markets memory ICs (DRAM/SRAM); a fabless memory designer/manufacturer.
Application
Possible application areas for AS4C512M16D3LB-12BCN:
- Embedded systems and mobile/hand-held devices
- Consumer electronics (set-top boxes, digital cameras, TVs, media players)
- Networking and telecom equipment (routers, switches)
- Automotive and industrial control systems
- Computer memory modules and upgrade/add-on boards
- Embedded systems and mobile/hand-held devices
- Consumer electronics (set-top boxes, digital cameras, TVs, media players)
- Networking and telecom equipment (routers, switches)
- Automotive and industrial control systems
- Computer memory modules and upgrade/add-on boards
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