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AS4C4M16SA-6TIN

Name: AS4C4M16SA-6TIN
Rating: 4.7 (12 reviews)

IC DRAM 64MBIT PAR 54TSOP II

製造商
製造商。部分 #AS4C4M16SA-6TIN
包 54-TSOP (0.400, 10.16mm Width)
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規格

Supplier	Alliance Memory, Inc.
Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	64Mb (4M x 16)
MemoryInterface	Parallel
ClockFrequency	166 MHz
WriteCycleTime-WordPage	2ns
AccessTime	5.4 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	54-TSOP (0.400, 10.16mm Width)

概述

Description

AS4C4M16SA-6TIN is a high-speed, 4-megabit SRAM from Alliance Memory. Key points:
- Density and organization: 4 Mbit, 256K words x 16 bits.
- Interface: asynchronous SRAM with 16-bit data bus (DQ0–DQ15) and 18 address lines (A0–A17). Control pins typically include CE, OE, WE (plus LB/UB for byte writes on a 16-bit bus).
- Voltage and speed: operates from a single low-voltage supply (commonly 2.7–3.6V) with a speed grade of 6 ns (6N).
- Operation: random read/write with typical SRAM timing; can enter standby when CE is deasserted.
- Applications: caches, frame buffers, buffering in embedded systems, video/image processing, and other high-speed data storage needs.
- Packaging: available in various small-outline/packaging options; check the datasheet for exact pinout and package type (the “-TIN” suffix relates to packaging).
For precise pinout, timing, voltage, and packaging details, consult the official AS4C4M16SA-6TIN datasheet.

Features

Here are the typical features of AS4C4M16SA-6TIN (Alliance Memory, 4M x 16 SRAM, speed grade -6):
- 64 Mbit total: 4M x 16 organization
- Synchronous burst SRAM with clocked interface
- Speed grade: -6 (about 6 ns access time)
- 3.0–3.6 V typically (3.3V class) operation
- CE, OE, WE control with 3-state I/O
- Burst read/write with programmable burst length and wraparound (industry-standard burst behavior)
- Low-power standby modes
- Temperature range commonly -40°C to 85°C (industrial)
- Pb-free (Tin) packaging option available
Note: exact voltage, burst options, and packaging can vary by revision/form factor—please consult the datasheet for precise specifications.

Package

TSOP II (Thin Small Outline Package), 44-pin, tin-lead finish.

Pinout

Pin count: 40 pins.
Function: AS4C4M16SA-6TIN is a 4M x 16-bit static RAM (SRAM). It uses 22 address inputs (A0–A21), a 16-bit bidirectional data bus (DQ0–DQ15), and memory control signals such as Chip Select (/CS), Output Enable (/OE), and Write Enable (/WE). Some packages also expose byte-enable pins (LB#/UB#) for 8/16-bit operation; these may be present or tied as required depending on the variant.

Manufacturer

- Manufacturer: Alliance Memory, Inc.
- What kind of company: A fabless semiconductor company that designs and markets memory ICs, notably SRAMs (high-speed static RAM) used in consumer, networking, and automotive applications.

Application

AS4C4M16SA-6TIN is a 64‑Mbit, 4M×16 synchronous DRAM. Typical applications:
- Embedded systems (industrial controllers, medical devices)
- Consumer electronics (set‑top boxes, digital TVs, cameras)
- Networking/telecom equipment (routers, switches)
- Automotive electronics (infotainment, instrument clusters)
- Printers and other office equipment
- Industrial automation and instrumentation