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AS4C4G8D4-62BCN
DDR4, 32GB, 4G X 8, 1.2V, 78-BAL
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規格
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 32Gbit |
| Memory Organization | 4G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (7.5x11) |
| Packaging | Tray |
| Access Time | 13.75 ns |
概述
Description
AS4C4G8D4-62BCN is a memory device part number for a DDR4 DRAM chip. In this naming, the “4G” typically indicates 4 gigabit density and the “8” points to an 8-bit data width (x8 device). The suffix “-62BCN” is a vendor-specific grade code that encodes speed, temperature rating, packaging, and other options. This part is used as a component on memory modules (DIMMs/SODIMMs) or inside devices’ boards to provide volatile RAM.
Because the exact electrical specs (voltage, speed grade, timings), package type, and reliability requirements depend on the original supplier and revision, you should consult the supplier’s datasheet for precise figures. If you can share the vendor (e.g., Samsung, Nanya, etc.) or the context (DIMM, embedded board, etc.), I can point you to the exact datasheet and summarize the key specs.
Because the exact electrical specs (voltage, speed grade, timings), package type, and reliability requirements depend on the original supplier and revision, you should consult the supplier’s datasheet for precise figures. If you can share the vendor (e.g., Samsung, Nanya, etc.) or the context (DIMM, embedded board, etc.), I can point you to the exact datasheet and summarize the key specs.
Pinout
- Pin count: 84 pins (BGA package)
- Function: Memory IC (RAM) in the AS4C4G8D4 family, 4‑Gbit density with an 8‑bit data bus; provides address, command, and data lines (DQ[7:0]) plus standard memory control signals (CK, CKE, CS, RAS, CAS, WE).
- Function: Memory IC (RAM) in the AS4C4G8D4 family, 4‑Gbit density with an 8‑bit data bus; provides address, command, and data lines (DQ[7:0]) plus standard memory control signals (CK, CKE, CS, RAS, CAS, WE).
Manufacturer
Manufacturer: Alliance Memory.
Kind of company: A US-based fabless semiconductor company that designs and markets DRAM and SRAM memory ICs, supplying OEMs and distributors worldwide.
Kind of company: A US-based fabless semiconductor company that designs and markets DRAM and SRAM memory ICs, supplying OEMs and distributors worldwide.
Application
AS4C4G8D4-62BCN is a NAND flash memory device used for embedded non-volatile storage. Typical application areas include:
- Embedded systems and consumer electronics (smartphones/tablets, digital cameras, camcorders, media players)
- Portable storage (USB drives, memory cards)
- Solid-state drives and firmware storage in laptops/servers
- Automotive/industrial infotainment and data-logging devices
- IoT/edge devices requiring reliable non-volatile storage
- Embedded systems and consumer electronics (smartphones/tablets, digital cameras, camcorders, media players)
- Portable storage (USB drives, memory cards)
- Solid-state drives and firmware storage in laptops/servers
- Automotive/industrial infotainment and data-logging devices
- IoT/edge devices requiring reliable non-volatile storage
Equivalent
I don’t have a current cross-reference database for that exact part. Please confirm the device type and specs: is AS4C4G8D4-62BCN NAND flash (density 4 Gbit, x8 I/O), NOR, or something else? Also provide packaging (e.g., TSOP8), operating voltage (e.g., 3.3V/1.8V), and speed. With that, I can give direct equivalents from Micron, Samsung, Winbond, Macronix, Kioxia, etc., or guide you to cross-reference tools.
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