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AS4C256M16D3LC-12BCN
IC DRAM 4GBIT PARALLEL 96FBGA
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規格
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (7.5x13.5) |
| Base Product Number | AS4C256 |
概述
Description
The AS4C256M16D3LC-12BCN is a DRAM (Dynamic Random Access Memory) chip manufactured by Alliance Memory. It is a 256 Megabit (32 Megabyte) DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) organized as 16 bits x 16 bits. This memory chip operates at a clock speed of 800 MHz, supporting data rates up to 1600 MT/s, and is designed for applications requiring high-performance memory solutions.
Key features include a low voltage operation of 1.5V, which helps to reduce power consumption while maintaining high-speed performance. The device is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) form factor, making it suitable for compact electronic designs. The AS4C256M16D3LC-12BCN is ideal for use in various applications, including consumer electronics, computing devices, and networking equipment, where reliable and efficient memory performance is essential.
Key features include a low voltage operation of 1.5V, which helps to reduce power consumption while maintaining high-speed performance. The device is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) form factor, making it suitable for compact electronic designs. The AS4C256M16D3LC-12BCN is ideal for use in various applications, including consumer electronics, computing devices, and networking equipment, where reliable and efficient memory performance is essential.
Features
The AS4C256M16D3LC-12BCN is a DDR3 SDRAM memory chip designed for high-performance applications. Key features include:
- Density: 256 Megabits (32 Megabytes) per chip, organized as 16 bits x 16 banks.
- Speed: Operates at a clock frequency of 800 MT/s, supporting a data rate of 1600 Mbps.
- Voltage: Operates at a low voltage of 1.5V ± 0.1V.
- Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
- Functions: Supports burst lengths of 4 and 8, allowing for efficient data transfer.
- Latency: Offers low CAS latency options, enhancing performance in specific applications.
- Thermal: Features built-in thermal management to ensure reliable operation under varying temperatures.
This chip is suitable for applications in consumer electronics, networking devices, and computing systems, providing a balance of performance and power efficiency.
- Density: 256 Megabits (32 Megabytes) per chip, organized as 16 bits x 16 banks.
- Speed: Operates at a clock frequency of 800 MT/s, supporting a data rate of 1600 Mbps.
- Voltage: Operates at a low voltage of 1.5V ± 0.1V.
- Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
- Functions: Supports burst lengths of 4 and 8, allowing for efficient data transfer.
- Latency: Offers low CAS latency options, enhancing performance in specific applications.
- Thermal: Features built-in thermal management to ensure reliable operation under varying temperatures.
This chip is suitable for applications in consumer electronics, networking devices, and computing systems, providing a balance of performance and power efficiency.
Package
The AS4C256M16D3LC-12BCN is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format.
Pinout
The AS4C256M16D3LC-12BCN is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 256 Meg x 16 bits and operates on a 1.5V power supply.
The key functions of its pins include:
- Data I/O: It features 16 data pins (DQ0-DQ15) for data transfer.
- Command/Address: Pins for command (CMD) and address (A) input, enabling control of the memory.
- Clock: It includes clock pins (CLK and CLK#) for synchronization.
- Control: Pins like CS# (Chip Select), RAS#, CAS#, and WE# (Write Enable) are used for memory operations.
- Power: VDD and VSS pins provide power and ground connections.
The device supports various features such as burst mode, and it is suitable for applications requiring high-speed memory access, such as in computers and other electronic devices.
The key functions of its pins include:
- Data I/O: It features 16 data pins (DQ0-DQ15) for data transfer.
- Command/Address: Pins for command (CMD) and address (A) input, enabling control of the memory.
- Clock: It includes clock pins (CLK and CLK#) for synchronization.
- Control: Pins like CS# (Chip Select), RAS#, CAS#, and WE# (Write Enable) are used for memory operations.
- Power: VDD and VSS pins provide power and ground connections.
The device supports various features such as burst mode, and it is suitable for applications requiring high-speed memory access, such as in computers and other electronic devices.
Manufacturer
The AS4C256M16D3LC-12BCN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in providing memory solutions, particularly in the areas of DRAM (Dynamic Random-Access Memory) and SRAM (Static Random-Access Memory). They focus on offering high-quality memory products for various applications, including consumer electronics, telecommunications, and industrial use. The company aims to provide cost-effective alternatives to original equipment manufacturer (OEM) memory products, ensuring compatibility and reliability in their offerings.
Application
The AS4C256M16D3LC-12BCN is a 4GB DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, computer systems, networking devices, and industrial equipment. Its high-speed performance and reliability make it suitable for laptops, desktops, servers, and embedded systems that require efficient data processing and storage.
Equivalent
The AS4C256M16D3LC-12BCN chip is a 256Mb DRAM (DDR3) memory component. Equivalent products include:
1. MT41J256M16HA-125
2. Hynix H5TQ2G83AFR
3. K4B4G1646D-BCK0
Ensure to verify specifications like speed, voltage, and pin configuration for compatibility in specific applications.
1. MT41J256M16HA-125
2. Hynix H5TQ2G83AFR
3. K4B4G1646D-BCK0
Ensure to verify specifications like speed, voltage, and pin configuration for compatibility in specific applications.
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