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AS4C256M16D3C-12BIN
IC DRAM 4GBIT PARALLEL 96FBGA
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規格
| Part Status | Active |
| Base Product Number | AS4C256 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (7.5x13.5) |
| Packaging | Tray |
| Access Time | 20 ns |
概述
Description
The AS4C256M16D3C-12BIN is a 256 Mb (megabit) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for high-performance applications. It operates at a 12 ns cycle time, providing efficient data transfer rates suitable for various electronic devices such as computers, tablets, and smartphones.
This memory chip features a 16-bit data width and supports a dual data rate, meaning it can transfer data on both the rising and falling edges of the clock signal, effectively doubling the data throughput. The AS4C256M16D3C-12BIN operates at a supply voltage of 1.5V, which helps reduce power consumption, making it suitable for battery-operated devices.
The chip is packaged in a compact form, allowing for easy integration into circuit boards. It complies with JEDEC standards, ensuring compatibility with other DDR3 components. Overall, the AS4C256M16D3C-12BIN is ideal for applications requiring high speed and low power consumption in memory solutions.
This memory chip features a 16-bit data width and supports a dual data rate, meaning it can transfer data on both the rising and falling edges of the clock signal, effectively doubling the data throughput. The AS4C256M16D3C-12BIN operates at a supply voltage of 1.5V, which helps reduce power consumption, making it suitable for battery-operated devices.
The chip is packaged in a compact form, allowing for easy integration into circuit boards. It complies with JEDEC standards, ensuring compatibility with other DDR3 components. Overall, the AS4C256M16D3C-12BIN is ideal for applications requiring high speed and low power consumption in memory solutions.
Features
The AS4C256M16D3C-12BIN is a 4Gb (256Mx16) DDR3 SDRAM memory chip designed for high-performance applications. Key features include:
1. Density: 4 Gigabits (Gb) of memory capacity organized as 256 Megabytes x 16 bits.
2. Data Rate: Operates at a data rate up to 1600 MT/s (megatransfers per second).
3. Operating Voltage: Requires a supply voltage of 1.5V, with a low-power mode option at 1.35V (DDR3L).
4. Package: Typically available in a standard 78-ball TFBGA package, facilitating easy integration into various circuit boards.
5. Latency: Designed for low latency, improving performance in memory-intensive applications.
6. Compatibility: Fully compliant with the DDR3 SDRAM specifications, ensuring compatibility with various systems.
7. Applications: Suitable for use in consumer electronics, computers, networking devices, and other applications requiring fast and efficient memory solutions.
This chip provides a balance of speed, efficiency, and capacity for modern computing needs.
1. Density: 4 Gigabits (Gb) of memory capacity organized as 256 Megabytes x 16 bits.
2. Data Rate: Operates at a data rate up to 1600 MT/s (megatransfers per second).
3. Operating Voltage: Requires a supply voltage of 1.5V, with a low-power mode option at 1.35V (DDR3L).
4. Package: Typically available in a standard 78-ball TFBGA package, facilitating easy integration into various circuit boards.
5. Latency: Designed for low latency, improving performance in memory-intensive applications.
6. Compatibility: Fully compliant with the DDR3 SDRAM specifications, ensuring compatibility with various systems.
7. Applications: Suitable for use in consumer electronics, computers, networking devices, and other applications requiring fast and efficient memory solutions.
This chip provides a balance of speed, efficiency, and capacity for modern computing needs.
Package
The AS4C256M16D3C-12BIN is a DDR3 SDRAM memory chip packaged in a standard 78-ball micro-BGA (Ball Grid Array) format.
Pinout
The AS4C256M16D3C-12BIN is a 4Gb (512MB) DDR3 SDRAM memory chip with a pin count of 60. It operates with a 16-bit data width and supports a data rate of up to 1600 MT/s. The primary functions of this chip include data storage and providing high-speed memory access in various applications, such as in computing and mobile devices. It features standard DDR3 functionalities like burst read/write, precharge, and refresh operations, making it suitable for use in memory modules and embedded systems. The '-12' in its designation indicates a manufacturing process of 12 nanometers, which contributes to improved performance and power efficiency.
Manufacturer
The AS4C256M16D3C-12BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the production of memory solutions, including DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), and other memory-related products. The company focuses on providing high-quality memory components for various applications in the consumer, industrial, and automotive markets. They offer a range of memory products that are designed to be compatible with legacy systems and serve as drop-in replacements for existing memory solutions.
Application
The AS4C256M16D3C-12BIN is a DDR3 SDRAM memory chip, commonly used in various applications such as consumer electronics, computing devices, networking equipment, automotive systems, and industrial applications. Its high-speed data transfer capability makes it suitable for laptops, desktops, servers, and embedded systems requiring efficient memory performance.
Equivalent
The AS4C256M16D3C-12BIN chip is a DDR3 SDRAM memory chip. Equivalent products include:
1. MT41K256M16HA-125
2. H5TQ2G83BFR
3. K4B4G1646F-BCRC
4. IS43TR16640D-125B
Ensure compatibility with specifications such as voltage, timing, and package type when selecting alternatives.
1. MT41K256M16HA-125
2. H5TQ2G83BFR
3. K4B4G1646F-BCRC
4. IS43TR16640D-125B
Ensure compatibility with specifications such as voltage, timing, and package type when selecting alternatives.
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