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AS4C1G16D4-062BIN
DDR4
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規格
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 1G x 16 |
| Memory Interface | POD |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x13) |
| Packaging | Tray |
| Access Time | 19 ns |
概述
Description
AS4C1G16D4-062BIN is a DRAM memory device (a single memory chip) used on memory modules and in embedded systems. The name encodes: a device in the AS/Alliance Memory family, with a 1Gbit capacity and a 16-bit data path (D4 indicates the x4 data-width family). The suffix -062BIN is a production bin/lot code that signals a specific speed grade, voltage and tested parameters for that device.
Key points:
- It’s a component, not a complete module.
- Exact speed, voltage, and timing depend on the 062BIN bin; consult the official datasheet for details.
- Typical uses include assembling DIMMs/SODIMMs or other DRAM-containing boards.
Next steps:
- Look up the official AS4C1G16D4-062BIN datasheet to confirm timing (tRCD, tRP, tCAS), voltage (VDD/VDDQ), package, and operating temperature.
Key points:
- It’s a component, not a complete module.
- Exact speed, voltage, and timing depend on the 062BIN bin; consult the official datasheet for details.
- Typical uses include assembling DIMMs/SODIMMs or other DRAM-containing boards.
Next steps:
- Look up the official AS4C1G16D4-062BIN datasheet to confirm timing (tRCD, tRP, tCAS), voltage (VDD/VDDQ), package, and operating temperature.
Features
AS4C1G16D4-062BIN is Alliance Memory DDR4 SDRAM. Key features (typical):
- DDR4 SDRAM device
- Density: 1 Gbit per device
- Organization: x16 data width
- Supply voltage: 1.2 V
- JEDEC-compliant DDR4 timing/signaling
- Bank/bank-group architecture (multi-bank)
- High-speed data rates available (up to DDR4-2400 depending on grade)
- RoHS compliant, Pb-free
- Package variant and temperature range indicated by BIN (consult datasheet for exact temp spec, e.g., industrial vs. commercial)
Note: Exact speed grade, bank count, and temperature range depend on the specific BIN variant; please refer to the datasheet for precise specifications.
- DDR4 SDRAM device
- Density: 1 Gbit per device
- Organization: x16 data width
- Supply voltage: 1.2 V
- JEDEC-compliant DDR4 timing/signaling
- Bank/bank-group architecture (multi-bank)
- High-speed data rates available (up to DDR4-2400 depending on grade)
- RoHS compliant, Pb-free
- Package variant and temperature range indicated by BIN (consult datasheet for exact temp spec, e.g., industrial vs. commercial)
Note: Exact speed grade, bank count, and temperature range depend on the specific BIN variant; please refer to the datasheet for precise specifications.
Package
62-ball FBGA (Fine Ball Grid Array) package.
Pinout
- Pin count: 63-ball BGA (63 pins)
- Function: DRAM memory IC with 1 Gbit density and a 16-bit wide data bus (x16).
- Function: DRAM memory IC with 1 Gbit density and a 16-bit wide data bus (x16).
Manufacturer
- Manufacturer: Alliance Memory, Inc.
- Kind of company: A semiconductor memory company that designs and markets DRAM memory products (fabless, outsourcing fabrication to foundries).
- Kind of company: A semiconductor memory company that designs and markets DRAM memory products (fabless, outsourcing fabrication to foundries).
Application
AS4C1G16D4-062BIN is a DDR4 SDRAM device (1Gb x16) from Alliance Memory. Applications include:
- Main memory for desktops, laptops, workstations (DIMMs/SODIMMs)
- Embedded/industrial systems (PLC, HMIs)
- Networking equipment (routers, switches)
- Automotive infotainment and telematics
- Consumer electronics (set-top boxes, smart TVs, gaming devices)
- Memory subsystems in servers/data centers requiring high-speed, low-power DRAM
- Main memory for desktops, laptops, workstations (DIMMs/SODIMMs)
- Embedded/industrial systems (PLC, HMIs)
- Networking equipment (routers, switches)
- Automotive infotainment and telematics
- Consumer electronics (set-top boxes, smart TVs, gaming devices)
- Memory subsystems in servers/data centers requiring high-speed, low-power DRAM
Equivalent
I can’t provide exact cross-refs without the datasheet. To cross AS4C1G16D4-062BIN, I need:
- density (Gb), bus width (x4/x8), speed (ns), voltage, package
- device type (DRAM, SRAM, etc.)
Please share the datasheet or a link (Digi-Key/Mouser). I’ll then propose equivalent parts (e.g., from Winbond, Macronix, Micron, SK hynix) that match the same specs.
- density (Gb), bus width (x4/x8), speed (ns), voltage, package
- device type (DRAM, SRAM, etc.)
Please share the datasheet or a link (Digi-Key/Mouser). I’ll then propose equivalent parts (e.g., from Winbond, Macronix, Micron, SK hynix) that match the same specs.
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