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AS4C1G16D4-062BCN
IC DRAM 16GBIT PARALLEL 96FBGA
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規格
| Part Status | Active |
| Base Product Number | AS4C1G16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 1G x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x13) |
| Packaging | Tray |
| Access Time | 19 ns |
概述
Description
AS4C1G16D4-062BCN is a memory device part number (AS4C family). In these codes:
- AS4C = memory family
- 1G = 1 Gbit density
- 16 = data width (often 16-bit)
- D4 = organization/technology (often x4)
- 062 = speed grade or timing/process indicator
- BCN = packaging/grade
The exact type (DRAM vs. NAND flash), voltage, timings, and package depend on the vendor’s datasheet. It’s used as a memory component in devices, for data storage or as system RAM/flash. For a precise introduction with specs, please share the vendor or a link to the datasheet.
- AS4C = memory family
- 1G = 1 Gbit density
- 16 = data width (often 16-bit)
- D4 = organization/technology (often x4)
- 062 = speed grade or timing/process indicator
- BCN = packaging/grade
The exact type (DRAM vs. NAND flash), voltage, timings, and package depend on the vendor’s datasheet. It’s used as a memory component in devices, for data storage or as system RAM/flash. For a precise introduction with specs, please share the vendor or a link to the datasheet.
Features
AS4C1G16D4-062BCN looks like a NAND flash device (exact features depend on the vendor/datasheet). If it is a 1 Gbit x16 device, typical features include:
- Density: ~1 Gbit per die with a 16-bit I/O interface
- NAND type: MLC (multi-level cell)
- Page size: commonly 2 KB (with a spare area of 64–128 bytes); some variants use 4 KB pages
- Interface: ONFI-compatible (revision varies by part)
- Supply/IO: standard flash voltages (often 3.3 V I/O, with device core supply per datasheet)
- Error handling: ECC via host/controller (often BCH), with bad-block management
- Performance features: multi-plane operations, cache/copy-back, read/write streaming
- Endurance: typical program/erase (P/E) cycles in the low thousands per block
- Temperature range: industrial options available (e.g., -40°C to 85°C in many parts)
Notes:
- Exact timings, voltage levels, page size, ECC strength, and endurance depend on the manufacturer and revision. Provide the datasheet for precise specs.
- Density: ~1 Gbit per die with a 16-bit I/O interface
- NAND type: MLC (multi-level cell)
- Page size: commonly 2 KB (with a spare area of 64–128 bytes); some variants use 4 KB pages
- Interface: ONFI-compatible (revision varies by part)
- Supply/IO: standard flash voltages (often 3.3 V I/O, with device core supply per datasheet)
- Error handling: ECC via host/controller (often BCH), with bad-block management
- Performance features: multi-plane operations, cache/copy-back, read/write streaming
- Endurance: typical program/erase (P/E) cycles in the low thousands per block
- Temperature range: industrial options available (e.g., -40°C to 85°C in many parts)
Notes:
- Exact timings, voltage levels, page size, ECC strength, and endurance depend on the manufacturer and revision. Provide the datasheet for precise specs.
Package
62-ball BGA package (BGA-62).
Pinout
- Pin count: 96 pins (96-ball BGA)
- Function: DDR3 SDRAM device, density 1 Gb, organization x16 (1Gbit, 16-bit data width) with a standard DDR3 interface (CK/CK#, CS#, CKE, RAS#, CAS#, WE#, BA0–BA2, A0–A12, DQ0–DQ15, DQS, DM, Vcc/Vss). Used as a memory device on modules requiring a 16-bit data path.
- Function: DDR3 SDRAM device, density 1 Gb, organization x16 (1Gbit, 16-bit data width) with a standard DDR3 interface (CK/CK#, CS#, CKE, RAS#, CAS#, WE#, BA0–BA2, A0–A12, DQ0–DQ15, DQS, DM, Vcc/Vss). Used as a memory device on modules requiring a 16-bit data path.
Manufacturer
- Manufacturer: Alliance Memory, Inc.
- Company type: A semiconductor memory company (fabless), designing and selling memory solutions such as SRAM/DRAM/PSRAM for embedded and consumer applications.
- Company type: A semiconductor memory company (fabless), designing and selling memory solutions such as SRAM/DRAM/PSRAM for embedded and consumer applications.
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