2SK3561

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2SK3561

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規格

Technology Si
Brand Toshiba
Product Type MOSFETs
Series 2SK3561
Factory Pack Quantity:Factory Pack Quantity 50
Subcategory Transistors
Shipping Restrictions Mouser does not presently sell this product in your region.
Mounting Style Through Hole
Height 15 mm
Length 10 mm
Width 4.5 mm
Unit Weight 0.068784 oz
Package / Case TO-220FP-3
Configuration Single
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 850 mOhms
Transistor Type 1 N-Channel

概述

Description

The 2SK3561 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It is commonly used in power supply circuits, motor drives, and other electronic devices that require efficient control of power. With a high breakdown voltage and low on-resistance, the 2SK3561 offers excellent performance in terms of thermal efficiency and switching speed.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 30V, continuous drain current (I_D) of approximately 20A, and a low R_DS(on) value, which minimizes power losses during operation. Its design allows for easy integration into various electronic circuits.
The 2SK3561 is available in a TO-220 package, which facilitates better heat dissipation. Overall, this MOSFET is favored for applications that demand reliability, efficiency, and high performance in compact designs. When using the 2SK3561, it is essential to refer to the manufacturer's datasheet for specific electrical characteristics and thermal management guidelines.

Features

The 2SK3561 is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Typically rated for a drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 15A, allowing usage in power circuits.
3. Low On-Resistance: Features a low R_DS(on), typically around 0.1Ω, contributing to efficient power management and reduced heat generation.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, enhancing performance in switching applications.
5. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, enabling easy driving with standard logic levels.
6. Package Type: Available in various packages such as TO-220 and TO-247 for versatile mounting options.
7. Applications: Commonly used in power supplies, motor drives, and as a switch in various electronic circuits.
These features make the 2SK3561 suitable for both consumer and industrial applications where efficient power control is essential.

Package

The 2SK3561 is typically packaged in a TO-220 format, which is a common type of package for power MOSFETs. This package provides good thermal performance and is suitable for various electronic applications.

Pinout

The 2SK3561 is an N-channel MOSFET primarily used for power switching applications. It typically comes in a TO-220 package, which has three pins. The pin configuration and functions are as follows:
1. Gate (G): This is the control pin that receives the input signal to turn the MOSFET on or off.
2. Drain (D): This pin is connected to the load and allows the current to flow from the drain to the source when the device is in the 'on' state.
3. Source (S): This pin is connected to ground or the negative side of the circuit. It serves as the reference point for the voltage applied to the gate.
The 2SK3561 is known for its low on-resistance and high-speed switching capabilities, making it suitable for various applications, including inverters, power supplies, and motor drivers.

Manufacturer

The 2SK3561 is a power MOSFET manufactured by Toshiba Corporation. Toshiba is a multinational conglomerate based in Japan, primarily focused on electronics and electrical equipment. The company was established in 1875 and has since evolved to specialize in a wide range of sectors, including semiconductor manufacturing, consumer electronics, information technology, and infrastructure. Toshiba is known for its innovation in the field of semiconductors, particularly in power devices, storage solutions, and computing technology.

Application

The 2SK3561 is an N-channel MOSFET primarily used in power electronics applications. Its key areas include switching power supplies, motor drives, and amplifiers. It is also suitable for applications in audio amplifiers, radio frequency amplifiers, and various high-frequency switching circuits due to its high-speed operation and low on-resistance. Additionally, it may be utilized in automotive electronics and industrial automation systems.

Equivalent

The 2SK3561 is a N-channel MOSFET. Equivalent products include:
1. 2SK3562
2. 2SK3563
3. IRF510
4. 2N7000 (lower specifications)
5. BSS138 (lower specifications)
Always verify specifications like voltage, current, and package type for compatibility in your application.

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