圖片僅供參考
2SK1058-E
MOSFET N-CH 160V 7A TO3P
- 製造商
- 製造商。 部分 #2SK1058-E
- 包 TO-3P-3
- 資料表
- 有現貨的3186
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 160 V |
| Current-ContinuousDrain(Id)@25°C | 7A (Ta) |
| Vgs(Max) | ±15V |
| InputCapacitance(Ciss)(Max)@Vds | 600 pF @ 10 V |
| PowerDissipation(Max) | 100W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3P |
概述
Description
The 2SK1058-E is an N-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in power electronic applications. It is designed for high-speed switching and features a low on-resistance, making it suitable for various applications such as power supplies, inverters, and motor drivers.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 60V, continuous drain current (I_D) of about 15A, and a low gate threshold voltage (V_GS(th)), allowing for efficient operation with low gate drive voltage. Its compact package design enhances thermal performance and minimizes space requirements on PCBs.
The 2SK1058-E is favored for its reliability, efficiency, and ease of integration into existing circuitry. It is crucial for engineers and designers to refer to the specific datasheet for detailed electrical characteristics, thermal management guidelines, and application notes to optimize performance in their designs.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 60V, continuous drain current (I_D) of about 15A, and a low gate threshold voltage (V_GS(th)), allowing for efficient operation with low gate drive voltage. Its compact package design enhances thermal performance and minimizes space requirements on PCBs.
The 2SK1058-E is favored for its reliability, efficiency, and ease of integration into existing circuitry. It is crucial for engineers and designers to refer to the specific datasheet for detailed electrical characteristics, thermal management guidelines, and application notes to optimize performance in their designs.
Features
The 2SK1058-E is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Low On-Resistance (R_DS(on)): Ensures efficient power handling, reducing heat generation.
2. High Voltage Rating: Typically rated for 600V, making it suitable for high-voltage applications.
3. High-Speed Operation: Capable of fast switching speeds, ideal for power supply circuits and motor control.
4. Low Gate Charge: Allows for reduced drive power, enhancing efficiency in circuit designs.
5. Robust Package: Available in TO-220 or similar packages, facilitating effective heat dissipation.
6. Applications: Commonly used in power supplies, inverters, and other power management systems.
Overall, the 2SK1058-E is a reliable choice for engineers seeking high-performance MOSFETs in demanding applications.
1. Low On-Resistance (R_DS(on)): Ensures efficient power handling, reducing heat generation.
2. High Voltage Rating: Typically rated for 600V, making it suitable for high-voltage applications.
3. High-Speed Operation: Capable of fast switching speeds, ideal for power supply circuits and motor control.
4. Low Gate Charge: Allows for reduced drive power, enhancing efficiency in circuit designs.
5. Robust Package: Available in TO-220 or similar packages, facilitating effective heat dissipation.
6. Applications: Commonly used in power supplies, inverters, and other power management systems.
Overall, the 2SK1058-E is a reliable choice for engineers seeking high-performance MOSFETs in demanding applications.
Package
The 2SK1058-E is typically available in a TO-220 package type, which is a standard package for power transistors, allowing for good heat dissipation and easy mounting on heat sinks.
Pinout
The 2SK1058-E is an N-channel MOSFET typically used for power management applications. It has a total of 3 pins, which serve the following functions:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the output current flows out of the device. It connects to the load side of the circuit.
3. Source (S) - This pin is connected to the ground or negative side of the circuit. Current flows into the source from the drain when the MOSFET is activated.
The 2SK1058-E is characterized by its high-speed switching capabilities and is often employed in applications such as power supplies, motor drivers, and audio amplifiers. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is where the output current flows out of the device. It connects to the load side of the circuit.
3. Source (S) - This pin is connected to the ground or negative side of the circuit. Current flows into the source from the drain when the MOSFET is activated.
The 2SK1058-E is characterized by its high-speed switching capabilities and is often employed in applications such as power supplies, motor drivers, and audio amplifiers. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
Manufacturer
The 2SK1058-E is manufactured by Mitsubishi Electric Corporation, a well-known Japanese multinational company. Mitsubishi Electric is a major player in the electronics and electrical equipment industry, specializing in a wide range of products and services including semiconductors, industrial automation, telecommunications, and consumer electronics. Founded in 1921, the company focuses on innovation and technology development, providing solutions for various sectors such as energy, transportation, and infrastructure. Mitsubishi Electric is recognized for its commitment to quality and sustainability in its manufacturing processes.
Application
The 2SK1058-E is an N-channel MOSFET primarily used in power applications. Its key areas include switching power supplies, motor drivers, audio amplifiers, and various industrial automation systems. It's suitable for high-speed switching and can handle significant voltage and current, making it ideal for power management and control circuits in consumer electronics and industrial equipment.
Equivalent
The 2SK1058-E is a high-voltage N-channel MOSFET. Equivalent products include the 2SK1058, IRF840, and MTP50N06E. Always check the specific datasheets for voltage, current ratings, and package types to ensure compatibility for your application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25V1635FZNQ03
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V16066M1I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25V1635FM2I
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZ2I-10..
Macronix