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2N7002P,215
MOSFET N-CH 60V 360MA TO236AB
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- 資料表 2N7002P,215 DataSheet
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規格
| Supplier | Nexperia USA Inc. |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 360mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.8 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 10 V |
| PowerDissipation(Max) | 350mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-236AB |
概述
Description
2N7002P is a small-signal N-channel MOSFET used as a logic-level switch in low-power circuits.
Key points:
- Type: Enhancement-mode N-channel MOSFET.
- Vds: about 60 V; Id typically around 200 mA (varies by vendor).
- Gate drive: low threshold (Vgs(th) ≈ 1–3 V); to minimize Rds(on) you usually drive at 4–5 V (lower Vgs means higher Rds(on)).
- Rds(on): a few ohms at Vgs = 4.5 V (higher at 2.5–3 V; check vendor data).
- Gate rating: ±20 V max.
- Package: often SOT‑23 (the “P” suffix is vendor/package variation, not a different device).
- Use: small-signal switching, level shifting, microcontroller-driven switches.
215 note:
- “215” is not a standard electrical spec; it’s likely a package code, date/lot code, or revision from a specific supplier. For exact numbers (Rds(on), Id, packaging), consult the supplier’s datasheet for your 2N7002P variant.
If you have a specific vendor or package, share it for precise specs.
Key points:
- Type: Enhancement-mode N-channel MOSFET.
- Vds: about 60 V; Id typically around 200 mA (varies by vendor).
- Gate drive: low threshold (Vgs(th) ≈ 1–3 V); to minimize Rds(on) you usually drive at 4–5 V (lower Vgs means higher Rds(on)).
- Rds(on): a few ohms at Vgs = 4.5 V (higher at 2.5–3 V; check vendor data).
- Gate rating: ±20 V max.
- Package: often SOT‑23 (the “P” suffix is vendor/package variation, not a different device).
- Use: small-signal switching, level shifting, microcontroller-driven switches.
215 note:
- “215” is not a standard electrical spec; it’s likely a package code, date/lot code, or revision from a specific supplier. For exact numbers (Rds(on), Id, packaging), consult the supplier’s datasheet for your 2N7002P variant.
If you have a specific vendor or package, share it for precise specs.
Features
Here are typical features of the 2N7002P:
- N-channel enhancement-mode MOSFET
- VDS: 60 V; ID: ~0.2 A continuous
- RDS(on): low; ~3 Ω (typ) at VGS = 10 V; ~4–6 Ω (max) at VGS = 4 V
- Gate threshold (VGS(th)): typically ~0.8–3 V
- Logic‑level gate drive; suitable for direct driven by microcontrollers
- Fast switching; low input capacitance
- Pb-free, RoHS-compliant; available in SOT‑23 (3-pin) package
- Applications: general-purpose switching, load driving, level shifting, small-signal switching
- Suitable for compact, surface-mount designs and automation circuits
- N-channel enhancement-mode MOSFET
- VDS: 60 V; ID: ~0.2 A continuous
- RDS(on): low; ~3 Ω (typ) at VGS = 10 V; ~4–6 Ω (max) at VGS = 4 V
- Gate threshold (VGS(th)): typically ~0.8–3 V
- Logic‑level gate drive; suitable for direct driven by microcontrollers
- Fast switching; low input capacitance
- Pb-free, RoHS-compliant; available in SOT‑23 (3-pin) package
- Applications: general-purpose switching, load driving, level shifting, small-signal switching
- Suitable for compact, surface-mount designs and automation circuits
Package
TO-92 plastic package (through-hole, 3-pin).
Pinout
The 2N7002P,215 is a 3‑pin (SOT‑23) N‑channel enhancement‑mode MOSFET. Typical pinout (SOT‑23):
- Pin 1: Gate (G)
- Pin 2: Drain (D) — often tied to the exposed pad/leadframe
- Pin 3: Source (S)
Function: low‑voltage, logic‑level small‑signal N‑MOSFET used for switching, level‑shifting, and general small‑signal amplification in low‑power circuits.
- Pin 1: Gate (G)
- Pin 2: Drain (D) — often tied to the exposed pad/leadframe
- Pin 3: Source (S)
Function: low‑voltage, logic‑level small‑signal N‑MOSFET used for switching, level‑shifting, and general small‑signal amplification in low‑power circuits.
Manufacturer
Manufacturer: Vishay Intertechnology (Vishay Siliconix). It is a global electronics company that designs and manufactures semiconductors and passive components, including discrete MOSFETs, diodes, resistors, and capacitors.
Equivalent
Direct equivalents: the 2N7002 from other manufacturers (ON Semiconductor, Nexperia, Diodes Inc.) and its SMD variants (2N7002K, 2N7002P). Common substitutes (verify ratings): BSS138, Si2302, IRLML2502, FDN306V/FDN337N. Always compare VDS, ID, RDS(on), Vth and package before substituting.
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