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2N7002DW
MOSFET 2N-CH 60V 0.115A SC88
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規格
| Part Status | Active |
| Base Product Number | 2N7002 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 115mA |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Power - Max | 200mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88 (SC-70-6) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
The 2N7002DW is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic circuits for switching and amplification applications. It features low on-resistance, high-speed operation, and is designed for low-voltage and low-power applications.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 200mA, and a gate-source threshold voltage (V_GS(th)) typically ranging from 1-3V. The device is often packaged in a SOT-23 or similar surface-mount format, making it suitable for compact circuit designs.
The 2N7002DW is popular in digital logic circuits, power management, and signal switching applications due to its ease of use and compatibility with standard logic levels. Its operation is primarily controlled by the voltage applied to the gate terminal, allowing for efficient switching with minimal power loss.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 200mA, and a gate-source threshold voltage (V_GS(th)) typically ranging from 1-3V. The device is often packaged in a SOT-23 or similar surface-mount format, making it suitable for compact circuit designs.
The 2N7002DW is popular in digital logic circuits, power management, and signal switching applications due to its ease of use and compatibility with standard logic levels. Its operation is primarily controlled by the voltage applied to the gate terminal, allowing for efficient switching with minimal power loss.
Features
The 2N7002DW is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The maximum continuous drain current (I_D) is about 200 mA.
3. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) typically in the range of 2-4V, allowing for low-voltage operation.
4. R_DS(on): The on-resistance (R_DS(on)) is low (around 0.5 ohms at V_GS = 10V), which enhances efficiency during operation.
5. Package Type: Available in a surface-mount SO-8 package, facilitating compact PCB designs.
6. Fast Switching: Suitable for high-speed switching applications.
7. Temperature Range: Operates effectively over a wide temperature range.
These features make the 2N7002DW ideal for switching and amplification in consumer electronics, automotive, and industrial applications.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The maximum continuous drain current (I_D) is about 200 mA.
3. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) typically in the range of 2-4V, allowing for low-voltage operation.
4. R_DS(on): The on-resistance (R_DS(on)) is low (around 0.5 ohms at V_GS = 10V), which enhances efficiency during operation.
5. Package Type: Available in a surface-mount SO-8 package, facilitating compact PCB designs.
6. Fast Switching: Suitable for high-speed switching applications.
7. Temperature Range: Operates effectively over a wide temperature range.
These features make the 2N7002DW ideal for switching and amplification in consumer electronics, automotive, and industrial applications.
Package
The 2N7002DW is packaged in a SOT-23 (Surface-Mounted Device, 3-lead) configuration. This compact package is suitable for surface mount applications.
Pinout
The 2N7002DW is an N-channel MOSFET in a surface-mount package, typically a SOT-23. It has three pins.
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This pin is where the load is connected; it allows current to flow from the drain to the source when the MOSFET is activated.
3. Source (S): This pin is connected to ground or the negative side of the circuit. Current flows from the drain to the source when the MOSFET is on.
In summary, the 2N7002DW has three pins (G, D, S) and functions as a switch to control current flow in electronic circuits.
1. Gate (G): This pin controls the MOSFET and is used to turn it on or off by applying a voltage.
2. Drain (D): This pin is where the load is connected; it allows current to flow from the drain to the source when the MOSFET is activated.
3. Source (S): This pin is connected to ground or the negative side of the circuit. Current flows from the drain to the source when the MOSFET is on.
In summary, the 2N7002DW has three pins (G, D, S) and functions as a switch to control current flow in electronic circuits.
Manufacturer
The 2N7002DW is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. ON Semiconductor focuses on providing innovative solutions in power management, analog, logic, timing, interface, and discrete components. The company serves various industries, including automotive, industrial, consumer electronics, and communications. ON Semiconductor is known for its commitment to sustainability and energy-efficient technologies, making it a key player in the semiconductor market.
Application
The 2N7002DW is a N-channel MOSFET commonly used in low-power switching applications, such as in digital circuits, signal amplification, and load switching. It is suitable for use in microcontroller interfacing, motor control, LED drivers, and power management systems. Its low on-resistance and fast switching capabilities make it ideal for applications requiring efficient power usage.
Equivalent
The 2N7002DW is an N-channel MOSFET. Equivalent products include the 2N7000, BS170, and BSS138. Other compatible options may include the IRLML2502 and Si2302. Always check datasheets for specifications to ensure suitability for your specific application.
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