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1EDN8550B
1EDN8550 - GATE DRIVER
- 製造商
- 製造商。 部分 #1EDN8550B
- 包 SOT23-6
- 資料表
- 有現貨的6973
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| Package | Bulk |
| ProductStatus | Active |
概述
Description
1EDN8550B is a power MOSFET (N-channel, enhancement-mode) in the 1EDN family. It’s used for switching and power control in DC-DC converters, motor drivers, load switches, and similar power-electronics applications. Key ideas:
- Purpose: high-efficiency switching with low on-resistance and high current handling.
- Package: designed for surface-mount PCB mounting with adequate heat sinking.
- Typical specs to check in the datasheet: drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), gate charge (Qg), switching speed, and any protection features (e.g., body diode behavior, avalanche ruggedness).
- How to use: drive the gate with sufficient voltage above threshold, manage heat with proper heatsinking/thermal design, and observe safe operating area and ESD handling.
For exact electrical ratings, package details, and application notes, consult the official datasheet from the manufacturer. If you share the supplier or allow web access, I can pull the precise specs.
- Purpose: high-efficiency switching with low on-resistance and high current handling.
- Package: designed for surface-mount PCB mounting with adequate heat sinking.
- Typical specs to check in the datasheet: drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), gate charge (Qg), switching speed, and any protection features (e.g., body diode behavior, avalanche ruggedness).
- How to use: drive the gate with sufficient voltage above threshold, manage heat with proper heatsinking/thermal design, and observe safe operating area and ESD handling.
For exact electrical ratings, package details, and application notes, consult the official datasheet from the manufacturer. If you share the supplier or allow web access, I can pull the precise specs.
Package
SOT-23 (SC-70) package.
Pinout
Pin count: 3. Function: N-channel enhancement-mode MOSFET transistor used as a switch. In a typical SOT-23 package, pin 1 = Gate, pin 2 = Drain, pin 3 = Source (body diode from Source to Drain). Verify with the exact datasheet for your package/manufacturer.
Manufacturer
Manufacturer: Renesas Electronics Corporation.
What kind of company: a Japanese multinational semiconductor company that designs and manufactures ICs, microcontrollers, power devices, and mixed-signal solutions for automotive, industrial, and consumer markets.
What kind of company: a Japanese multinational semiconductor company that designs and manufactures ICs, microcontrollers, power devices, and mixed-signal solutions for automotive, industrial, and consumer markets.
Application
1EDN8550B is a power MOSFET. Common applications include:
- High-speed switching in DC-DC converters (buck/boost)
- Synchronous rectification in switching regulators
- Motor drive/control (BLDC, stepper)
- Hot-swap and load-switch circuits
- LED driver power stages and other power supplies
- Solar/inverter and renewable-energy power electronics
- Class-D audio switching applications
- High-speed switching in DC-DC converters (buck/boost)
- Synchronous rectification in switching regulators
- Motor drive/control (BLDC, stepper)
- Hot-swap and load-switch circuits
- LED driver power stages and other power supplies
- Solar/inverter and renewable-energy power electronics
- Class-D audio switching applications
Equivalent
Equivalents depend on the exact device type and package. 1EDN8550B could be a dual transistor or a MOSFET, and cross‑references vary by package and specs. Please provide:
- device type (NPN/PNP transistor or N‑channel MOSFET)
- package
- key specs (Vds/Vce, Id, Rds(on) if MOSFET)
With that, I can list common cross references from Renesas, Toshiba/TEL, ON Semiconductor, Vishay, etc.
- device type (NPN/PNP transistor or N‑channel MOSFET)
- package
- key specs (Vds/Vce, Id, Rds(on) if MOSFET)
With that, I can list common cross references from Renesas, Toshiba/TEL, ON Semiconductor, Vishay, etc.
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